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On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications

Autor
Gonzalez, J.; Martineau, B.; Belot, D.
Tipus d'activitat
Article en revista
Revista
Microelectronics journal
Data de publicació
2012-05-17
Volum
43
Número
8
Pàgina inicial
582
Pàgina final
591
DOI
https://doi.org/10.1016/j.mejo.2012.04.003 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/16133 Obrir en finestra nova
URL
http://dx.doi.org/10.1016/j.mejo.2012.04.003 Obrir en finestra nova
Resum
This paper presents a study of the effects of slottedmetallicplanes in passive structures built using CMOSprocesses for RF and millimeter-wave (mmW) applications. The impact of holes on the reference plane resistance and in the capacitance of any surrounding structure to the plane are investigated through electromagnetic (EM) simulations. Two analytical expressions are derived that capture the holes impact on the plane resistivity and on the dielectric constant of the materials found between the...
Citació
González, J.; Martineau, B.; Belot, D. On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications. "Microelectronics journal", 17 Maig 2012, vol. 43, núm. 8, p. 582-591.
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants

  • Gonzalez Jimenez, Jose Luis  (autor)
  • Martineau, Baudouin  (autor)
  • Belot, Didier  (autor)