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Optical absorption of radio frequency sputtered GaAs(Ti) films

Autor
Boronat, A.; Silvestre, S.; Fuertes, D.; Castañer, L.; Martí, A.; Luque, A.
Tipus d'activitat
Article en revista
Revista
Journal of materials science. Materials in electronics
Data de publicació
2012-08-14
Volum
24
Número
3
Pàgina inicial
993
Pàgina final
998
DOI
https://doi.org/10.1007/s10854-012-0864-9 Obrir en finestra nova
Projecte finançador
Investigación en Materia de una nueva generación de materiales, células y sistemas para la conversión fotovoltaica (GENESIS-FV) GENESIS CSD I00912
Repositori
http://hdl.handle.net/2117/16705 Obrir en finestra nova
URL
http://www.springerlink.com/content/6j166q253676668j/ Obrir en finestra nova
Resum
Composition and optical absorption of thin films of GaAs(Ti) and GaAs, deposited by sputtering on glass substrates under different process conditions, have been investigated. The thin films obtained are typically 200 nm thick. ToF–SIMS measurements show a quite constant concentration and good uniformity of Ti profiles along the GaAs(Ti) layers in all cases and EPMA results indicate that Ti content increases with the substrate temperature in the sputtering process. Measurements of the transmitt...
Citació
Boronat, A. [et al.]. Optical absorption of radio frequency sputtered GaAs(Ti) films. "Journal of materials science. Materials in electronics", 14 Agost 2012, vol. on line, núm. on line, p. 1-6.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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