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A Modified Charge Pumping Method for Measuring Interface States Up to the Ghz Range

Autor
Fernandez-Garcia, R.
Tipus d'activitat
Article en revista
Revista
Journal of electronic testing. Theory and applications
Data de publicació
2009-06-18
Volum
25
Número
4
Pàgina inicial
279
Pàgina final
283
DOI
https://doi.org/10.1007/s10836-009-5104-8 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/6340 Obrir en finestra nova
Resum
In this paper we present a modified on-chip charge pumping method for measuring the interface states in ultra-thin gate oxide complementary metal-oxide-semiconductor (CMOS) technology. The proposed method, which characterizes oxide interface states by applying pulse frequencies up to the GHz range, is used to evaluate the evolution of interface states due to dynamic negative bias temperature instability stress on the p-channel field-effect transistor (pFET). The results show that charge pumping ...
Citació
Fernandez, R. A Modified Charge Pumping Method for Measuring Interface States Up to the Ghz Range. "Journal of electronic testing. Theory and applications", 18 Juny 2009, vol. 25, núm. 4, p. 279-283.
Grup de recerca
RFEMC - Grup de Radiofreqüència i Compatibilitat Electromagnètica en Xarxes de Comunicacions

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