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Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications

Autor
Colina, M.A.; Molpeceres, C.; Holgado, M.; Gandía, J.; Nos, O.; Ocaña, J.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2010-04-14
Volum
518
Número
18
Pàgina inicial
5331
Pàgina final
5339
DOI
https://doi.org/10.1016/j.tsf.2010.04.016 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/20421 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0040609010005389# Obrir en finestra nova
Resum
Laser scribing of hydrogenated amorphous silicon (a-Si:H) is a crucial step in the fabrication of thin film photovoltaic modules. During such process, inherent thermo-mechanical effects associated to laser ablation mechanisms lead to thermal damages. In that sense, the state of the material remaining in the vicinity of the ablated area has a critical influence on the electrical properties of the final devices. In this work, a comprehensive analysis of refractive index variations for the material...
Citació
Colina, M.A. [et al.]. Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications. "Thin solid films", 14 Abril 2010, vol. 518, núm. 18, p. 5331-5339.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants

  • Colina Brito, Monica Alejandra  (autor)
  • Molpeceres Alvarez, Carlos  (autor)
  • Holgado, Miguel  (autor)
  • Gandía, Javier  (autor)
  • Nos, Oriol  (autor)
  • Ocaña, José L.  (autor)