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RF performance projections of graphene FETs vs. silicon MOSFETs

Autor
Rodriguez, S.; Vaziri, S.; Ostling, M.; Rusu, A.; Alarcon, E.; Lemme, M.
Tipus d'activitat
Article en revista
Revista
ECS solid state letters
Data de publicació
2012-08
Volum
1
Número
5
Pàgina inicial
39
Pàgina final
41
DOI
https://doi.org/10.1149/2.001205ssl Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/19953 Obrir en finestra nova
URL
http://ssl.ecsdl.org/content/1/5/Q39 Obrir en finestra nova
Resum
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of speed despite their higher mobility. This is counterintuitive, but can be explained by the effect of a strongly nonlinear voltage-dependent gate capacitance. GFETs achieve their maximum performance only for narrow ranges of V-DS and I-DS, which must be careful...
Citació
Rodriguez, S. [et al.]. RF performance projections of graphene FETs vs. silicon MOSFETs. "ECS SOLID STATE LETTERS", Agost 2012, vol. 1, núm. 5, p. 39-41.
Paraules clau
Field-effect transistors
Grup de recerca
EPIC - Energy Processing and Integrated Circuits
PERC-UPC - Centre de Recerca d'Electrònica de Potència UPC

Participants

  • Rodriguez Duenas, Saul  (autor)
  • Vaziri, Sam  (autor)
  • Ostling, Mikael  (autor)
  • Rusu, Ana  (autor)
  • Alarcon Cot, Eduardo Jose  (autor)
  • Lemme, Max  (autor)

Arxius