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Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process

Autor
Boronat, A.; Silvestre, S.; Orpella, A.
Tipus d'activitat
Article en revista
Revista
Journal of vacuum science and technology. B, Nanotechnology & microelectronics
Data de publicació
2013-09-12
Volum
31
Número
5
Pàgina inicial
1
Pàgina final
7
DOI
https://doi.org/10.1116/1.4820912 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/20142 Obrir en finestra nova
URL
http://avspublications.org/jvstb/resource/1/jvtbd9/v31/i5/p051209_s1 Obrir en finestra nova
Resum
A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing process and the electrical response of the metal–semiconductor contact are characterized. A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphol...
Citació
Boronat, A.; Silvestre, S.; Orpella, A. Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process. "Journal of Vacuum Science and Technology B", 12 Setembre 2013, vol. 31, núm. 5, p. 051209-1-051209-7.
Paraules clau
GaAs, laser firing, ohmic contact
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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