Carregant...
Carregant...

Vés al contingut (premeu Retorn)

Systematic and random variability analysis of two different 6T-SRAM layout topologies

Autor
Amat, Esteve; Amatlle, E.; Gómez, S.; Aymerich, N.; Garcia, C.; Moll, F.; Rubio, A.
Tipus d'activitat
Article en revista
Revista
Microelectronics journal
Data de publicació
2013-09
Volum
44
Número
9
Pàgina inicial
787
Pàgina final
793
DOI
https://doi.org/10.1016/j.mejo.2013.06.010 Obrir en finestra nova
Projecte finançador
TEC2008-01856 PRINCIPIOS DE DISEÑO Y TEST DE SISTEMAS INTEGRADOS EN TERA-ESCALA
Repositori
http://hdl.handle.net/2117/20392 Obrir en finestra nova
Resum
This paper studies the device variability influence on 6T-SRAM cells in a function of the regularity level of their layout. Systematic and random variations have been analyzed when these memory circuits are implemented on a 45 nm technology node. The NBTI aging relevance on these cells has been also studied for two layout topologies and SNM has been seen as the parameter that suffers the highest impact with respect to cell aging and variability.
Citació
Amat, E. [et al.]. Systematic and random variability analysis of two different 6T-SRAM layout topologies. "Microelectronics journal", Setembre 2013, vol. 44, núm. 9, p. 787-793.
Paraules clau
6T-SRAM, Degradation, Regular layout, Variability
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants

Arxius