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On-chip MOSFET temperature sensor for electrical characterization of RF circuits

Autor
Reverter, F.; Gómez, D.; Altet, J.
Tipus d'activitat
Article en revista
Revista
IEEE sensors journal
Data de publicació
2013-09
Volum
13
Número
9
Pàgina inicial
3343
Pàgina final
3344
DOI
https://doi.org/10.1109/JSEN.2013.2273572 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6560371 Obrir en finestra nova
Resum
This letter proposes a new sensor circuit to measure on-chip low-frequency temperature changes that have information about electrical high-frequency figures of merit of a radio frequency (RF) circuit. The proposed sensor circuit uses a metal-oxide-semiconductor field-effect transistor (MOSFET) as a temperature sensing device, which is then connected to a band-pass filter that amplifies the low-frequency temperature signal generated by the RF circuit under test (CUT). Simulations in 65 nm CMOS te...
Paraules clau
IC testing, MOSFET, temperature sensor
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
e-CAT - Circuits i Transductors Electrònics

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