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Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

Autor
Lopez, G.; Ortega, P.; Voz, C.; Martin, I.; Colina, M.A.; Morales, A.; Orpella, A.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Beilstein Journal of Nanotechnology
Data de publicació
2013-11-06
Volum
4
Pàgina inicial
726
Pàgina final
731
DOI
https://doi.org/10.3762/bjnano.4.82 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/20585 Obrir en finestra nova
Resum
The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks...
Citació
Lopez, G. [et al.]. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates. "Beilstein Journal of Nanotechnology", 06 Novembre 2013, vol. 4, p. 726-731.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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