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Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates

Autor
Galiana, B.; Silvestre, S.; Algora, C.; Rey-Stolle, I.
Tipus d'activitat
Article en revista
Revista
Journal of materials science. Materials in electronics
Data de publicació
2013-10
Número
October 2013
Pàgina inicial
1
Pàgina final
5
DOI
https://doi.org/10.1007/s10854-013-1562-y Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/20627 Obrir en finestra nova
URL
http://link.springer.com/article/10.1007%2Fs10854-013-1562-y Obrir en finestra nova
Resum
This work reports changes in the structural properties of sputtered GaAs layers deposited on Si (100) substrates induced by thermal annealing under different arsine atmospheres. The effects of the AsH3 partial pressure (PAsH3) and of the annealing temperature in the GaAs layer properties were analyzed by means of in situ reflectance spectroscopy, in situ transient reflectance at 2.65 eV, X-ray diffraction and atomic force microscopy. The results obtained reveal a direct correlation between the A...
Citació
Galiana, B. [et al.]. Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates. "Journal of materials science. Materials in electronics", Octubre 2013, núm. October 2013, p. 1-5.
Paraules clau
Characterization and Evaluation of Materials, Optical and Electronic Materials
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants