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Magnetic-field sensor based on a thin-film SOI transistor

Autor
Losantos, P.; Cané, C.; Flandre, D.; Eggermont, J.P.
Tipus d'activitat
Article en revista
Revista
Sensors and actuators A. Physical
Data de publicació
1998-01-01
Volum
67
Número
1-3
Pàgina inicial
96
Pàgina final
101
DOI
https://doi.org/10.1016/S0924-4247(97)01771-8 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/21006 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0924424797017718 Obrir en finestra nova
Resum
This paper presents a magnetic sensor on thin-film SOI-SIMOX that takes advantage of a previous bipolar structure, the VCBM (voltage-controlled bipolar MOS transistor) to improve magnetic response with low power consumption. The buried oxide avoids substrate currents, while keeping a high relative sensitivity, up to 50% T-1, of the sensor. The paper introduces the structure and theoretical operation regions for both electric and magnetic features. Experimental results on two devices validate the...
Citació
Losantos, P. [et al.]. Magnetic-field sensor based on a thin-film SOI transistor. "Sensors and actuators A. Physical", 01 Gener 1998, vol. 67, núm. 1-3, p. 96-101.
Paraules clau
Magnetic sensors SOI Bipolar VCBM

Participants

  • Losantos Viñolas, Pedro  (autor)
  • Cané Ballart, Carles  (autor)
  • Flandre, Denis  (autor)
  • Eggermont, Jean-Paul  (autor)