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High-density capacitor devices based on macroporous silicon and metal electroplating

Autor
Vega, D.; Reina, J.; Pavón, R.; Rodriguez, A.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on electron devices
Data de publicació
2014-01
Volum
61
Número
1
Pàgina inicial
116
Pàgina final
122
DOI
https://doi.org/10.1109/TED.2013.2290065 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/21460 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6670097 Obrir en finestra nova
Resum
This paper presents a novel technique for the fabrication of ultrahigh capacitance structures based on macroporous silicon. Electrochemical etching is used to create a 3-D template in silicon. These structures reach high specific capacitances and can be incorporated into integrated circuits. Very low series resistance is attained using a metal electrode. The fabrication technology uses standard UV lithography for silicon patterning, and a low-temperature electroplating process for the electrode ...
Citació
Vega, D. [et al.]. High-density capacitor devices based on macroporous silicon and metal electroplating. "IEEE transactions on electron devices", Gener 2014, vol. 61, núm. 1, p. 116-122.
Paraules clau
Electrochemical etching, Electrodeposition, High density capacitors, Porous silicon
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants

  • Vega Bru, Didac  (autor)
  • Reina Marsinyach, Jordi  (autor)
  • Pavón Urbano, Ramón  (autor)
  • Rodriguez Martinez, Angel  (autor)