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Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

Autor
Morales, A.; Voz, C.; Colina, M.A.; Lopez, G.; Martin, I.; Ortega, P.; Orpella, A.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Energy procedia
Data de publicació
2014-01-31
Volum
44
Pàgina inicial
3
Pàgina final
9
DOI
https://doi.org/10.1016/j.egypro.2013.12.002 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/21497 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S1876610213018158 Obrir en finestra nova
Resum
The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the transparent ...
Citació
Morales, A. [et al.]. Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing. "Energy procedia", 31 Gener 2014, vol. 44, p. 3-9.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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