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Restraints in low dimensional organic semiconductor devices at high current densities

Autor
Pfattner, R.; Moreno, C.; Voz, C.; Alcubilla, R.; Rovira, C.; Puigdollers, J.; Mas, M.
Tipus d'activitat
Article en revista
Revista
Organic electronics
Data de publicació
2014-01
Volum
1199
Número
15
Pàgina inicial
211
Pàgina final
215
DOI
https://doi.org/10.1016/j.orgel.2013.10.026 Obrir en finestra nova
Projecte finançador
Células solares orgánicas basadas en estructura P-I-N
Repositori
http://hdl.handle.net/2117/21661 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S1566119913004710 Obrir en finestra nova
Resum
The understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work the performance of organic thin-film and single crystal field-effect transistors with the same active material was studied in detail focusing on the high current density regime, where a pronounced non-hysteretic maximum in the transconductance was found. Interestingly, in this ...
Citació
Pfattner, R. [et al.]. Restraints in low dimensional organic semiconductor devices at high current densities. "Organic electronics", Gener 2014, vol. 1199, núm. 15, p. 211-215.
Paraules clau
High current densities, Kelvin probe microscopy, Organic field-effect transistor, Space charges, Transconductance
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants