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Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

Autor
Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo , S.; Alcubilla, R.; Bertomeu, J.; Antony, A.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2014-03-31
Volum
555
Pàgina inicial
107
Pàgina final
111
DOI
https://doi.org/10.1016/j.tsf.2013.08.010 Obrir en finestra nova
Projecte finançador
Células solares orgánicas basadas en estructura P-I-N
Repositori
http://hdl.handle.net/2117/22490 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0040609013013023 Obrir en finestra nova
Resum
In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage valu...
Citació
Marsal, A. [et al.]. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors. "Thin solid films", 31 Març 2014, vol. 555, p. 107-111.
Paraules clau
Density-of-states, MAGNETRON COSPUTTERING SYSTEM, Thin films, Thin-film transistor, ZNO, Zinc-indium-tin-oxide
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants