This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.
Altet, J. [et al.]. Temperature sensors to measure the central frequency and 3 dB bandwidth in mm W power amplifiers. "IEEE microwave and wireless components letters", Abril 2014, vol. 24, núm. 4, p. 272-274.