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Design and comparison of flipped active inductors with high quality factors

Autor
Saberkari, A.; Ziabakhsh, S.; Martinez, H.; Alarcon, E.
Tipus d'activitat
Article en revista
Revista
Electronics Letters
Data de publicació
2014-05-19
Volum
50
Número
13
Pàgina inicial
925
Pàgina final
927
DOI
https://doi.org/10.1049/el.2014.0488 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/24337 Obrir en finestra nova
Resum
A new design based on the flipped-structure for RF active inductors is presented. The conventional flipped-active inductor (FAI) composed of only two transistors is considered as a starting structure. However, it suffers from low-voltage swing, which increases the nonlinearity. Additionally, it requires high power consumption to achieve adequate inductance and quality factor values. A circuit topology named cascoded FAI (CASFAI) based on the basic FAI is proposed. A common-gate transistor added ...
Citació
Saberkari, A. [et al.]. Design and comparison of flipped active inductors with high quality factors. "Electronics Letters", 19 Maig 2014, vol. 50, núm. 13, p. 925-927.
Paraules clau
CMOS integrated circuits, Electric network topology, Engineering controlled terms: Bandpass filters, Inductance
Grup de recerca
EPIC - Energy Processing and Integrated Circuits
PERC-UPC - Centre de Recerca d'Electrònica de Potència UPC

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