Carregant...
Carregant...

Vés al contingut (premeu Retorn)

c-Si solar cells based on laser-processed dielectric films

Autor
Martin, I.; Colina, M.A.; Coll, A.; Lopez, G.; Ortega, P.; Orpella, A.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Energy procedia
Data de publicació
2014-09
Volum
55
Pàgina inicial
255
Pàgina final
264
DOI
https://doi.org/10.1016/j.egypro.2014.08.077 Obrir en finestra nova
Projecte finançador
Dopado con láser del silicio cristalino: aplicación a emisores selectivos y nuevas estructuras de células solares
High efficiency rear contact solar cells and ultra-powerful modules
Repositori
http://hdl.handle.net/2117/24714 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S1876610214013010 Obrir en finestra nova
Resum
This paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. Phosphorus-doped silicon carbide stacks (SiCx(n)) and aluminium oxide/silicon carbide (Al2O3/SiCx) stacks are used for the creation of n+ and p+ regions respectively. These films provide excellent surface passivation on both n- and p-type substrates with effective surface recombination ...
Citació
Martin, I. [et al.]. c-Si solar cells based on laser-processed dielectric films. "Energy procedia", Setembre 2014, vol. 55, p. 255-264.
Paraules clau
Inversion layer emitters, Laser doping, Point-like contacts, c-Si solar cells
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants