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On the observation of electron-hole liquid luminescence under low excitation in Al2O3-passivated c-Si wafers

Autor
Roige, A.; Fernandez, J.; Osso, J.; Goni, A.; Martin, I.; Voz, C.; Alcubilla, R.; Vega, L.
Tipus d'activitat
Article en revista
Revista
Physica status solidi. Rapid research letters
Data de publicació
2014-11-01
Volum
8
Número
11
Pàgina inicial
943
Pàgina final
947
DOI
https://doi.org/10.1002/pssr.201409336 Obrir en finestra nova
Projecte finançador
Dopado con láser del silicio cristalino: aplicación a emisores selectivos y nuevas estructuras de células solares
Resum
We report on low-temperature photoluminescence (PL) from aluminum oxide (Al2O3)-passivated c-Si wafers, which surprisingly exhibits clear signature of the formation of the so-called electron-hole liquid (EHL), despite the use of excitation powers for which the condensed phase is not usually observed in bulk Si. The elevated incident photon densities achieved with our micro-PL setup together with the relatively long exciton lifetimes associated with a good quality, indirect band-gap semiconductor...
Paraules clau
Al2O3, CONDENSATION, PHOTOLUMINESCENCE, SILICON, electron-hole liquid, photoluminescence, silicon, surface passivation, wafers
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants