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Emitter formation using laser doping technique on n- and p-type c-Si substrates

Autor
Lopez, G.; Ortega, P.; Colina, M.A.; Voz, C.; Morales, A.; Orpella, A.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Applied surface science
Data de publicació
2015-05-01
Volum
336
Pàgina inicial
182
Pàgina final
187
DOI
https://doi.org/10.1016/j.apsusc.2014.10.140 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/25232 Obrir en finestra nova
Resum
In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiC x /a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al 2 O 3 ) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 cm p- and n-type FZ c-Si substrates respectively are ...
Citació
Lopez, G. [et al.]. Emitter formation using laser doping technique on n- and p-type c-Si substrates. "Applied surface science", 04 Novembre 2014.
Paraules clau
ALD, Al2O3, CONTACTS, INDUCED DIFFUSION, Laser doping, PECVD, SILICON SOLAR-CELLS, a-SiCx
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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