Carregant...
Carregant...

Vés al contingut (premeu Retorn)

Influence of the SiO2 layer thickness on the degradation of HfO2 / SiO2 stacks subjected to static and dynamic stress conditions

Autor
Amat, Esteve; Rodríguez, R.; Nafría, M.; Aymerich , X.; Stathis, J.H.
Tipus d'activitat
Article en revista
Revista
Microelectronics reliability
Data de publicació
2007
Volum
47
Número
5-7
Pàgina inicial
544
Pàgina final
547
DOI
https://doi.org/10.1016/j.microrel.2007.01.003 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S002627140700008X Obrir en finestra nova
Resum
The substitution of the SiO2 gate oxide in MOS devices by a material with a high-k dielectric constant is being deeply studied nowadays to solve the problem of the leakage currents that appear with the progressive scaling of SiO2 thickness. To improve the quality of the high-k/Si interface a very thin SiO2 film is grown between both materials. In this work, HfO2/SiO2 stacks with different SiO2 thickness were subjected to different types of stress (static and dynamic) to analyze the effect of thi...

Participants

  • Amat Bertran, Esteve  (autor)
  • Rodríguez Martínez, Rosana  (autor)
  • Nafría Maqueda, Montserrat  (autor)
  • Aymerich Humet, Xavier  (autor)
  • Stathis, J.H.  (autor)