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Peculiar characteristics of nanocrystal memory cells programming window

Autor
Gasperini, A.; Amat, Esteve; Martin, J.; Porti, M.; Nafría, M.; Paccagnella, A.
Tipus d'activitat
Article en revista
Revista
Journal of vacuum science and technology B
Data de publicació
2009
Volum
27
Número
1
Pàgina inicial
512
Pàgina final
516
DOI
https://doi.org/10.1116/1.3025854 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?arnumber=5130610 Obrir en finestra nova
Resum
In this work the authors study nanocrystal memory cells, focusing on a peculiar characteristic of these devices: the programming window measured in subthreshold region is larger than that measured in linear region. For converse, floating gate flash memory cells with a similar structure feature the same programming window in linear and subthreshold regions. To understand the cause of the difference observed in the nanocrystal memory cells, the authors perform two dimensional technology computer a...

Participants

  • Gasperini, A.  (autor)
  • Amat Bertran, Esteve  (autor)
  • Martin Martínez, Javier  (autor)
  • Porti Pujal, Marc  (autor)
  • Nafría Maqueda, Montserrat  (autor)
  • Paccagnella, A.  (autor)