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Effects of the localization of the charge in nanocrystal memory cells

Autor
Gasperini, A.; Amat, Esteve; Porti, M.; Martin, J.; Nafría, M.; Aymerich , X.; Paccagnella, A.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on electron devices
Data de publicació
2009
Volum
56
Número
5
Pàgina inicial
1063
Pàgina final
1069
DOI
https://doi.org/10.1109/TED.2009.2028404 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5238630 Obrir en finestra nova
Resum
In this paper, we present a peculiar characteristic of nanocrystal (NC) memory (NCM) cells: The programming (P) windows measured in linear and subthreshold regions are different. A floating-gate flash memory cell with a similar structure does not show the same behavior, and the P window (PW) is independent of the current level of the extrapolation, as expected. By performing 2-D TCAD simulations, we demonstrated that this characteristic of NCM cells is due to the localization of the charge into ...

Participants

  • Gasperini, A.  (autor)
  • Amat Bertran, Esteve  (autor)
  • Porti Pujal, Marc  (autor)
  • Martin Martínez, Javier  (autor)
  • Nafría Maqueda, Montserrat  (autor)
  • Aymerich Humet, Xavier  (autor)
  • Paccagnella, A.  (autor)