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Understanding and optimization of Hot-Carrier reliability in germanium-on-silicon pMOSFETs

Autor
Maji, D.; Crupi, F.; Amat, Esteve; Simoen, E.; De Jaeger, B.; Brunco, D.; Manoj, C.; Ramgopal Rao, V.; Magnone, P.; Giusi, G.; Pace, C.; Pantisano, L.; Mitard, J.; Rodríguez, R.; Nafría, M.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on electron devices
Data de publicació
2009
Volum
56
Número
5
Pàgina inicial
1063
Pàgina final
1069
DOI
https://doi.org/10.1109/TED.2009.2015854 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=04804776 Obrir en finestra nova
Resum
In this paper, a comprehensive study of hot-carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high- k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: 1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; 2) NBTI degradation is a lesser concern than HCI ...

Participants

  • Maji, Debabrata  (autor)
  • Crupi, Felice  (autor)
  • Amat Bertran, Esteve  (autor)
  • Simoen, Eddy  (autor)
  • De Jaeger, Brice  (autor)
  • Brunco, David  (autor)
  • Manoj, C.R.  (autor)
  • Ramgopal Rao, V.  (autor)
  • Magnone, Paolo  (autor)
  • Giusi, Gino  (autor)
  • Pace, Calogero  (autor)
  • Pantisano, Luigi  (autor)
  • Mitard, Jerome  (autor)
  • Rodríguez Martínez, Rosana  (autor)
  • Nafría Maqueda, Montserrat  (autor)