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Competing degradation mechanism in short-channel transistors under channel hot-carrier stress at elevated temperatures

Autor
Amat, Esteve; Kauerauf, T.; Degraeve, R.; Rodríguez, R.; Nafría, M.; Aymerich , X.; Groeseneken, G.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on device and materials reliability
Data de publicació
2009
Volum
9
Número
3
Pàgina inicial
454
Pàgina final
458
DOI
https://doi.org/10.1109/TDMR.2009.2025178 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5075549 Obrir en finestra nova
Resum
The temperature dependence of channel hot-carrier (CHC) degradation in n-MOS transistors with high-k dielectrics has been studied. The analysis starts from the most damaging CHC stress conditions at room temperature (V G = V D/2 for long channels and V G = V D for short channels). We find that, for long-channel transistors, the CHC degradation decreases at high temperature, while for short-channel transistors, an increase is observed. In this paper, a new picture to explain the observed incremen...

Participants

  • Amat Bertran, Esteve  (autor)
  • Kauerauf, Thomas  (autor)
  • Degraeve, Robin  (autor)
  • Rodríguez Martínez, Rosana  (autor)
  • Nafría Maqueda, Montserrat  (autor)
  • Aymerich Humet, Xavier  (autor)
  • Groeseneken, Guido  (autor)