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Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

Autor
Amat, Esteve; Kauerauf, T.; Degraeve, R.; Rodríguez, R.; Nafría, M.; Aymerich , X.; Groeseneken, G.
Tipus d'activitat
Article en revista
Revista
International journal of numerical modeling. Electronic networks devices and fields
Data de publicació
2010
Volum
23
Número
4-5
Pàgina inicial
315
Pàgina final
323
DOI
https://doi.org/10.1002/jnm.750 Obrir en finestra nova
URL
http://onlinelibrary.wiley.com/doi/10.1002/jnm.750/abstract Obrir en finestra nova
Resum
The degradation produced by channel hot-carrier (CHC) on short channel transistors with high-k dielectric has been analyzed. For short channel transistors (L<0.15¿µm), the most damaging stress condition has been found to be VG=VD instead of the ‘classical’ VG=VD/2 determined for long channel transistors. In this work, experimentally validated simulations have been performed to demonstrate that this shift is not caused by the presence of the high-k layer but due to short channel effects. Fu...
Paraules clau
high-k, hot-carrier degradation, reliability, short channel devices

Participants

  • Amat Bertran, Esteve  (autor)
  • Kauerauf, Thomas  (autor)
  • Degraeve, Robin  (autor)
  • Rodríguez Martínez, Rosana  (autor)
  • Nafría Maqueda, Montserrat  (autor)
  • Aymerich Humet, Xavier  (autor)
  • Groeseneken, Guido  (autor)