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Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors

Autor
Amat, Esteve; Martin, J.; Gonzalez, M.B.; Rodríguez, R.; Nafría, M.; Aymerich , X.; Verheyen, P.; Simoen, E.
Tipus d'activitat
Article en revista
Revista
Journal of vacuum science and technology B
Data de publicació
2011
Volum
29
Número
1
Pàgina inicial
01AB07
Pàgina final
01AB07-4
DOI
https://doi.org/10.1116/1.3523396 Obrir en finestra nova
URL
http://scitation.aip.org/content/avs/journal/jvstb/29/1/10.1116/1.3523396 Obrir en finestra nova
Resum
he channel hot-carrier (CHC) degradation in metal-oxide semiconductorfield-effect transistors based on a high-kdielectric with strained-Si/relaxed Si1-xGex structures has been little studied so far. However, due to the high mobility enhancement observed in these samples, a deeper study of the CHC impact on them is necessary. In this article, the effects of the Ge content, overgrowth, channel length, and operating temperature on the CHC degradation have been analyzed. The results show that device...

Participants

  • Amat Bertran, Esteve  (autor)
  • Martin Martínez, Javier  (autor)
  • Gonzalez, Mireia B.  (autor)
  • Rodríguez Martínez, Rosana  (autor)
  • Nafría Maqueda, Montserrat  (autor)
  • Aymerich Humet, Xavier  (autor)
  • Verheyen, Peter  (autor)
  • Simoen, Eddy  (autor)