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A comprehensive study of Channel Hot-Carrier degradation in short channel MOSFETs with high-k dielectrics

Autor
Amat, Esteve; Kauerauf, T.; Rodríguez, R.; Nafría, M.; Aymerich , X.; Degraeve, R.; Groeseneken, G.
Tipus d'activitat
Article en revista
Revista
Microelectronic engineering
Data de publicació
2013
Volum
103
Pàgina inicial
144
Pàgina final
149
DOI
https://doi.org/10.1016/j.mee.2012.10.011 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0167931712005588 Obrir en finestra nova
Resum
This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high ID and dynamic operation conditions. To explain the CHC damage behavior in short channel devices, we divide the total CHC degradation in two components: the classical CHC damage located at drain side and the degradation produced by the voltage drop over the gate dielectric, whi...

Participants

  • Amat Bertran, Esteve  (autor)
  • Kauerauf, Thomas  (autor)
  • Rodríguez Martínez, Rosana  (autor)
  • Nafría Maqueda, Montserrat  (autor)
  • Aymerich Humet, Xavier  (autor)
  • Degraeve, Robin  (autor)
  • Groeseneken, Guido  (autor)