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A dual-band outphasing transmitter using broadband class E power amplifiers

Autor
Ruiz, M.; Marante, R.; Rizo, L.; García, J. A.; Gilabert, Pere L.; Montoro, G.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
Any de l'edició
2014
Data de presentació
2014-04-02
Llibre d'actes
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
Pàgina inicial
1
Pàgina final
4
DOI
https://doi.org/10.1109/INMMIC.2014.6815087 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/26377 Obrir en finestra nova
Resum
In this paper, a dual-band outphasing transmitter (able of operating either at 770 MHz or 960 MHz frequency bands) is presented. Two broadband RF power amplifiers (PAs) have been designed over packaged GaN HEMT devices, switching close to the nominal zero-voltage and zerovoltage-derivative class E conditions. A reactive combiner, using transmission lines of appropriate electrical lengths at both bands, together with compensating reactances, allows positioning the drain impedance loci to produce ...
Citació
Ruiz, M. N. [et al.]. A dual-band outphasing transmitter using broadband class E power amplifiers. A: International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. "Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on". Leuven: 2014, p. 1-4.
Paraules clau
Chireix, Class E, Efficiency, Gan Hemt, Power Amplifier, Outphasing Transmitter
Grup de recerca
CSC - Components and Systems for Communications Research Group

Participants