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On-chip thermal testing using MOSFETs in weak inversion

Autor
Reverter, F.; Altet, J.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on instrumentation and measurement
Data de publicació
2015-02-01
Volum
64
Número
2
Pàgina inicial
524
Pàgina final
532
DOI
https://doi.org/10.1109/TIM.2014.2341371 Obrir en finestra nova
Projecte finançador
Aproximación multinivel al diseño orientado a la fiabilidad de circuitos integrados analógicos y digitales
Repositori
http://hdl.handle.net/2117/84660 Obrir en finestra nova
Resum
This paper analyzes the feasibility of using metal-oxide-semiconductor field-effect transistors (MOSFETs) operating in weak inversion as temperature sensors for on-chip thermal testing applications. MOSFETs in weak inversion are theoretically analyzed so as to know how their sensitivity to temperature depends on both dimensions and bias current. Theoretical predictions are then compared with simulations and experimental data resulting from MOSFETs fabricated in a commercial 0.35-µm CMOS technol...
Citació
Reverter, F., Altet, J. On-chip thermal testing using MOSFETs in weak inversion. "IEEE transactions on instrumentation and measurement", 01 Febrer 2015, vol. 64, núm. 2, p. 524-532.
Paraules clau
Metal-oxide-semiconductor field-effect transistors (MOSFETs) sensor, subthreshold operation, temperature sensor, thermal testing, weak inversion
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
e-CAT - Circuits i Transductors Electrònics

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