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Fet noise-parameter determination using a novel technique based on 50-/spl Omega/ noise-figure measurements

Autor
Lazaro, A.; Pradell, L.; O'callaghan, J.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on microwave theory and techniques
Data de publicació
1999-03
Volum
47
Número
3
Pàgina inicial
315
Pàgina final
324
DOI
https://doi.org/10.1109/22.750233 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/86312 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=750233 Obrir en finestra nova
Resum
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [CINT 11 , CINT 22 , Re(CINT 12 ), Im(CINT 12 )] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-...
Citació
Lazaro, A., Pradell, L., O'callaghan, J. FET noise-parameter determination using a novel technique based on 50 noise measurements. "IEEE transactions on microwave theory and techniques", Març 1999, vol. 47, núm. 3, p. 315-324.
Paraules clau
Acoustic reflection, Calibration
Grup de recerca
RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones

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