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Model predicts large-signal modfet performance

Autor
O'callaghan, J.; Beyer, J.
Tipus d'activitat
Article en revista
Revista
Microwaves and RF
Data de publicació
1989-11
Volum
28
Número
11
Pàgina inicial
113
Pàgina final
1382
URL
http://hdl.handle.net/2117/1248 Obrir en finestra nova
Resum
Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwave applications. Unfortunately, there are few large-signal models available for MODFETs, and determining the parameters of these models at high power levels is often difficult. A good large-signal model can be obtained from small-signal measurements that require relatively common microwave instrumentation. The authors explain how small-signal measurements of various bias points yield a useful nonl...
Citació
O'Callaghan, J.M.; Beyer, J.B. Model predicts large-signal modfet performance. Microwaves & RF, 1989, vol.28, núm.11, p.113-14, 116, 118-19

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