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Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

Autor
von Gastrow, G.; Alcubilla, R.; Ortega, P.; Yli-Koski, M.; Conesa-Boj, S.; Fontcuberta i Morral, A.; Savin, H.
Tipus d'activitat
Article en revista
Revista
Solar energy materials and solar cells
Data de publicació
2015-11
Volum
142
Pàgina inicial
29
Pàgina final
33
DOI
https://doi.org/10.1016/j.solmat.2015.05.027 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/84498 Obrir en finestra nova
URL
http://ac.els-cdn.com/S0927024815002329/1-s2.0-S0927024815002329-main.pdf?_tid=b5171b34-b867-11e5-bb28-00000aacb35d&acdnat=1452519306_b99682dcae364207f0138f2c6a478c74 Obrir en finestra nova
Resum
NOTICE: this is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, vol. 142, (Nov...
Citació
von Gastrow, G., Alcubilla, R., Ortega, P., Yli-Koski, M., Conesa-Boj, S., Fontcuberta i Morral, A., Savin, H. Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon. "Solar energy materials and solar cells", Novembre 2015, vol. 142, p. 29-33.
Paraules clau
Al2O3, Atomic Layer Deposition, Nano-texturing, Negative charge, Reactive ion etching, Surface passivation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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