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Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures: Experiment and modeling

Autor
Boukhili , W.; Mahdouani, M.; Bourguiga, R.; Puigdollers, J.
Tipus d'activitat
Article en revista
Revista
Microelectronic engineering
Data de publicació
2016-01-25
Volum
150
Pàgina inicial
47
Pàgina final
56
DOI
https://doi.org/10.1016/j.mee.2015.11.006 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/81863 Obrir en finestra nova
Resum
A series of inverted-staggered (top contact) p-channel organic thin film transistors based on small molecule tetraphenyldibenzoperiflanthene (DBP) as an active layer have been fabricated by thermal evaporation at different substrate temperatures (300, 330, 360 and 390 K). In this work, these devices have been electrically characterized at different temperatures from 300 K to 370 K in steps of 10 K under vacuum. The influences of the temperature on the electrical performance of DBP-TFTs have been...
Citació
Boukhil, W., Mahdouani, M., Bourguiga, R., Puigdollers, J. Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures: Experiment and modeling. "Microelectronic engineering", 25 Gener 2016, vol. 150, p. 47.
Paraules clau
Analytical modeling, DBP-OTFTs, Electrical parameter extraction, Thermally activated behavior
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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