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1 to 50 of 157 results
  • Restraints in low dimensional organic semiconductor devices at high current densities

     Pfattner, Raphael; Moreno Sierra, Cesar; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon; Rovira, Concepció; Puigdollers Gonzalez, Joaquin; Mas Torrent, Marta
    Organic electronics
    Date of publication: 2014-01
    Journal article

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    The understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work the performance of organic thin-film and single crystal field-effect transistors with the same active material was studied in detail focusing on the high current density regime, where a pronounced non-hysteretic maximum in the transconductance was found. Interestingly, in this operation mode for both, thin films and single crystals, comparable densities of free and gate-induced charge carriers were estimated. Kelvin probe microscopy was used to measure the contact potential difference and the electrical field along the transistor channel during device operation exhibiting the formation of local space charges in the high current density regime. © 2013 Elsevier B.V. All rights reserved.

  • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

     Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Galindo Lorente, Sergi; Alcubilla Gonzalez, Ramon; Bertomeu Balaguero, Joan; Antony, Aldrin
    Thin solid films
    Date of publication: 2014-03-31
    Journal article

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    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. (C) 2013 Elsevier B.V. All rights reserved.

  • Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Asensi López, José Miguel; Galindo Lorente, Sergi; Cheylan, S.; Pacios, R.; Ortega Villasclaras, Pablo Rafael; Alcubilla Gonzalez, Ramon
    Organic electronics
    Date of publication: 2013-06
    Journal article

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    This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the behavior of this type of devices. It is experimentally shown that this recombination term determines the slope of the current-voltage characteristic at the short-circuit condition. The variation of this dynamic resistance with the light intensity can be interpreted considering a dominant first-order recombination process. Finally, an analytical model under a constant electric field approximation is presented that can be used to calculate the charge carrier collection efficiency of the device. This model can be also used to estimate an effective mobility-lifetime product, which is characteristic of the quality of the active layer.

    This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the behavior of this type of devices. It is experimentally shown that this recombination term determines the slope of the current–voltage characteristic at the short-circuit condition. The variation of this dynamic resistance with the light intensity can be interpreted considering a dominant first-order recombination process. Finally, an analytical model under a constant electric field approximation is presented that can be used to calculate the charge carrier collection efficiency of the device. This model can be also used to estimate an effective mobility–lifetime product, which is characteristic of the quality of the active layer.

  • Progress in silicon heterojunction solar cell fabrication with rear laser-fired contacts

     Morales Vilches, Ana Belen; Voz Sanchez, Cristobal; Colina Brito, Monica Alejandra; Lopez Rodriguez, Gema; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Garcia Rodriguez, Miguel; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2013-02
    Presentation of work at congresses

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    Silicon Heterojunction (SHJ) solar cells are one of the most promising alternatives for high efficiency industrially feasible solar cells. The structure of these devices is based on hydrogenated amorphous silicon (a-Si:H) layers deposited at low temperature on crystalline silicon (c-Si) substrates. This fabrication process reduces the thermal stress on the substrate and is compatible with thinner wafers. In this work, we present our recent progress in the fabrication of SHJ solar cells on p-type c-Si wafers. The deposition conditions of hydrogenated amorphous silicon-carbon (a-SiCx:H) layers obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) are optimized. We have also applied a novel laser-firing process to contact the rear side of the fabricated devices. In this way, solar cells with point contacts through rear passivating layers can be fabricated without any photolithographic step.

  • Photon control in nano-structured organic photovoltaic materials  Open access

     Betancur Lopera, Rafael Andres
    Defense's date: 2013-07-10
    The Institute of Photonic Sciences, Universitat Politècnica de Catalunya
    Theses

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    Organic photovoltaic (OPV) technology has emerged as a potential cost-effective solution to produce electrical energy. The foreseen low manufacturing costs combined with features as semi-transparency or mechanical flexibility give to OPV devices a strong potential for industrial applicability. However, the commercial implementation of this technology faces the challenge of increasing the relatively low power conversion efficiency of the current state-of-the-art OPV devices. This thesis presents an optical based approach to enhance the performance of OPV devices by effectively controlling sunlight photons. Such control is possible because of the coherent interaction between light and the multilayered structure constituting the OPV device. Accordingly, we studied the dependence of the optical field distribution inside the solar cell relative to the optical properties of the different layers including their refractive index , extinction coefficient , and thickness. This optical study led to the prediction of optimal OPV device structures. The first implementation of a photon control was done by changing the relative thicknesses of the different layers in the device. An optimal combination of thicknesses was found and confirmed experimentally. A significant reduction of the energy lost in the device was demonstrated. As a consequence, the photon harvesting improved, which led to a close matching between the external and internal quantum efficiencies in a broad wavelength range. A second photon control strategy to enhance the performance of OPV cells was implemented by modifying the complex refractive index of the nonactive device layers. Both and were changed in specific layers by considering new materials. Three different cases were considered: in the first example a BCP layer was used to replace calcium as electron transporting layer. The parasitic absorption induced by the highly absorptive calcium layer was diminished almost to zero after replacing this layer with BCP, a material whose extinction coefficient is null for a broad wavelength range. A 19% performance enhancement was demonstrated. In the second example, an ultrathin nickel oxide layer was used to replace the commonly used PEDOT layer as hole transporting layer. Very thin layers of nickel oxide could be used for a better photon distribution and harvesting in the photoactive layer. In the last case, a metallic cupper/nickel semi-transparent electrode was used to replace an ITO electrode. This new metallic electrode in combination with the back aluminum electrode enabled the formation of an optical cavity which resulted in a stronger localization of the field in the active layer. Finally, several of the concepts considered above to effectively localize the field in the active layer were used in conjunction with a photonic structure integrated in the OPV architecture to achieve an optically optimized semi-transparent OPV device. In particular, a one-dimensional non-periodic photonic crystal was designed and added to a semi-transparent OPV device in order to re-harvest UV and IR photons while keeping a high transmission for the visible photons. A power conversion efficiency enhancement larger than 56% was achieved while maintaining the device luminosity around 30%. An additional feature of the integration of such photonic crystal was the possibility of tuning the color transmitted by the device which was also demonstrated. In summary, in this thesis we demonstrate experimentally and theoretically that optics plays a very relevant role for enhancing the power conversion efficiency of OPV devices. The methods presented are perfectly compatible with a more oriented material science approach to achieve the final objective of obtaining a performance-competitive OPV technology.

    La tecnología fotovoltaica orgánica (OPV) ha surgido como una solución potencial rentable para producir energía eléctrica. Los bajos costos de manufactura previstos combinados con propiedades como semi-transparencia o flexibilidad mecánica le dan a los dispositivos OPV un gran potencial de ser aplicados industrialmente. Sin embargo, la implementación comercial de esta tecnología se enfrenta al reto de incrementar la relativamente baja eficiencia de los dispositivos OPV del estado del arte. Esta tesis presenta una aproximación óptica para aumentar la eficiencia de los dispositivos OPV mediante un control efectivo de los fotones de la radiación solar. Tal control es posible debido a la interacción coherente entre la luz y la estructura de multi-capas que constituye el dispositivo OPV. Consecuentemente, en esta tesis se estudia la dependencia de la distribución del campo óptico dentro de la celda solar con las propiedades ópticas de las diferentes capas. Entre esas propiedades se incluyen el índice de refracción , el coeficiente de extinción y espesor de cada una de las capas. Este estudio óptico ha permitido predecir estructuras óptimas para los dispositivos OPV. La primera implementación del control de fotones fue hecha al cambiar los espesores relativos de las diferentes capas en el dispositivo. Una combinación óptima fue encontrada y confirmada experimentalmente. Una reducción significativa de la energía perdida por reflexión especular fue demostrada y como consecuencia, la recolección de fotones fue mejorada lo cual condujo a la concordancia entre las eficiencias cuánticas externa e internas en un amplio rango de longitudes de onda. Una segunda estrategia de control de fotones para mejorar el desempeño de los dispositivos OPV fue implementada tras modificar las propiedades ópticas de las capas en el dispositivo distintas a la capa activa. Tanto como fueron cambiados en capas específicas tras considerar nuevos materiales. Tres casos diferentes fueron considerados: en el primer caso, una capa de BCP fue usada para reemplazar el calcio como capa transportadora de electrones. La absorción parásita inducida por el elvevado coeficiente de extinción de la capa de calcio fue reducida casi hasta cero tras reemplazar esta capa con una de BCP, un material cuyo coeficiente de absorción es prácticamente cero para un amplio rango de longitudes de onda. Se demostró un aumento en el desempeño de los dispositivos de hasta el 19%. En el segundo ejemplo, una capa ultra-delgada de óxido de níquel fue usada para reemplazar la comúnmente empelada capa de PEDOT como capa transportadora de huecos. Estas capas de óxido de níquel permitieron una mejor distribución y recolección de fotones en la capa foto-activa. En el último caso, un electrodo semi-transparente hecho de cobre/níquel fue usado para reemplazar un electrodo de ITO. Este nuevo electrodo metálico en combinación con el electrodo de aluminio posterior del dispositivo permitió la formación de una cavidad óptica la cual resultó en una mayor localización del campo en la capa activa. Finalmente, varios de los conceptos considerados anteriormente para localizar efectivamente el campo en la capa activa fueron usados en combinación con una estructura fotónica integrada en la estructura para obtener un dispositivo OPV semitransparente ópticamente optimizado. Concretamente, un cristal fotónico unodimensional no-periódico fue diseñado y añadido al dispositivo OPV semi-trasparente con la intención de recolectar fotones UV e IR y al tiempo manteniendo una alta transmisión de los fotones visibles. Una mejora en el desempeño de los dispositivos superior al 56% fue obtenida preservando la luminosidad del dispositivo alrededor del 30%. Una propiedad adicional aportada por la integración de tales cristales fotónicos fue la posibilidad de modular el color transmitido por el dispositivo lo cual fue también demostrado. En síntesis, en esta tesis se demostró experimental y teóricamente que la óptica juega un papel relevante para aumentar la eficiencia de los dispositivos OPV. Los métodos presentados son perfectamente compatibles con la aproximación que se realiza desde la perspectiva de la ciencia de los materiales al objetivo final de obtener una tecnología OPV competitiva.

  • Lumogen violet dye as luminiscent down-shifting layer for C-silicon solar cells

     Ahmed, H.; Kennedy, M.; Confrey, T.; Doran, J.; McCormack, S.J.; Galindo Lorente, Sergi; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation's date: 2012-09-25
    Presentation of work at congresses

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    In this investigation Naphtalimide based Lumogen Violet organic dye [BASF] is characterized for inclusion in luminescent downshifting (LDS) layers. A PV device made up of an LDS layer of Lumogen Violet deposited on top of a crystalline silicon cell has been fabricated to improve its power conversion efficiency. External quantum efficiency measurements and outdoor tests for the PV/LDS devices are discussed. An analytical model was also developed to compare experiment results with the model predictions.

  • Comparison between the density-of-states of picene transistors measured in air and under vacuum

     Voz Sanchez, Cristobal; Marsal Vinade, Albert; Moreno Sierra, Cesar; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    Synthetic metals
    Date of publication: 2012-01
    Journal article

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    Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect mobilities up to 1.3 cm2 V−1 s−1 and on/off ratios above 105 in ambient conditions. These devices have been electrically characterized over the temperature range 300–360 K in air and also under vacuum conditions. In particular, the thermal activation energy of the channel conductance as a function of the gate bias has been measured. The dependence of the activation energy on the gate bias corresponds to a gradual shift of the Fermi level towards the HOMO level as more gap states are filled by trapped holes. The density-of-states can be estimated from the derivative of the activation energy with respect to gate bias. The calculated density-of-states is compared for devices measured in air and under vacuum conditions. These results can help to understand the gas sensing capability of picene, together with its enhanced electrical performance after air exposure.

  • Organic metal¿organic semiconductor blended contacts in single crystal field-effect transistors

     Pfattner, Raphael; Mas Torrent, Marta; Moreno, Cesar; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Bilotti, I.; Venuti, E.; Brillante, Aldo; Laukhin, V.; Veciana, Jaume; Rovira, Concepció
    Journal of materials chemistry
    Date of publication: 2012-06-25
    Journal article

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  • Células solares orgánicas basadas en estructura P-I-N

     Puigdollers Gonzalez, Joaquin
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  • Simulation of organic inverter

     Papadopoulos, N. P.; Marsal Vinade, Albert; Picos, Rodrigo; Puigdollers Gonzalez, Joaquin; Hatzopoulos, A. A.
    Solid-state electronics
    Date of publication: 2012-02-02
    Journal article

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    Pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) have been used as organic semiconductors for the fabrication of p-type and n-type organic thin-film transistors (OTFTs). Both types of semiconductors are well-established and demonstrate good performance in single devices, but few competitive results have been reported in complementary circuits. In this manuscript, we show the fabrication, electrical characterization and simulation of an organic complementary inverter using pentacene and PTCDI-C13 as active semiconductors. Simulation was done using a model with physical aspects. We report good fitting of p-type and n-type parameters for the OTFT model and good results for DC transfer characteristics of the organic complementary inverter. The fitting of the parameters of the OTFT model is performed using an optimized parameter extraction technique which is using fuzzy logic to adjust the parameters to its optimal value.

  • Access to the full text
    Crystalline silicon solar cells beyond 20% efficiency  Open access

     Ortega Villasclaras, Pablo Rafael; Lopez Rodriguez, Gema; Orpella Garcia, Alberto; Colina Brito, Monica Alejandra; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Bermejo Broto, Alexandra; Puigdollers Gonzalez, Joaquin; Garcia Molina, Miguel; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2011-02-08
    Presentation of work at congresses

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    —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have been achieved using thermal SiO2 as a rear passivation layer on 2 cm x 2 cm solar cells with 0.45 cm Fz c-Si substrates. Efficiencies up to 22% are expected for material resistivities in the 0.4–5 cm using an optimized rear contact grid

  • Low voltage operating complementary inverters fabricated at low temperature

     Puigdollers Gonzalez, Joaquin; Marsal Vinade, Albert; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2011-02-09
    Presentation of work at congresses

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  • Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties

     Oton, Francisco; Pfattner, Raphael; Pavlica, Egon; Olivier, Yoann; Bratina, Gvido; Cornil, Jerome; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Fontrodona, Xavier; Mas Torrent, Marta; Veciana, Jaume; Rovira, Concepcio
    Crystengcomm
    Date of publication: 2011
    Journal article

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  • Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors

     Oton, Francisco; Pfattner, Raphael; Pavlica, Egon; Olivier, Yoann; Moreno, Evelyn; Puigdollers Gonzalez, Joaquin; Bratina, Gvido; Cornil, Jerome; Fontrodona, Xavier; Mas Torrent, Marta; Veciana, Jaume; Rovira, Concepcio
    Chemistry of materials
    Date of publication: 2011-02-08
    Journal article

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  • CARACTERIZACIÓN DE MATERIALES SEMICONDUCTORES ORGÁNICOS PARA EL DISEÑO Y FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS

     Della Pirriera, Mónica Beatriz
    Defense's date: 2011-10-26
    Department of Electronic Engineering, Universitat Politècnica de Catalunya
    Theses

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  • Q-00012

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
    Participation in a competitive project

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  • Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor

     Moreno Sierra, Cesar; Pfattner, Raphael; Mas Torrent, Marta; Puigdollers Gonzalez, Joaquin; Bromley, Stephan; Rovira, Concepció; Alcubilla Gonzalez, Ramon; Veciana, Jaume
    Journal of materials chemistry B
    Date of publication: 2011-11-16
    Journal article

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    Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon.

  • Células fotovoltaicas con un rendimiento del 20.5%

     Ortega Villasclaras, Pablo Rafael; Lopez Rodriguez, Gema; Orpella Garcia, Alberto; Martin Garcia, Isidro; Colina Brito, Monica Alejandra; Voz Sanchez, Cristobal; Bermejo Broto, Alexandra; Puigdollers Gonzalez, Joaquin; Garcia Molina, Francisco Miguel; Alcubilla Gonzalez, Ramon
    Solar News
    Date of publication: 2011-03-01
    Journal article

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    Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial con respecto a los rendimientos habituales en células comerciales que sitúa en un 15%, y la cuota más elevada a la que se ha llegado hasta ahora en España. En estos momentos trabajan en mejoras que las hagan accesibles industrialmente. El avance, tras años de investigación, consiste en minimizar los diferentes mecanismos de pérdidas que influyen en el cómputo de la eficiencia de conversión fotovoltaica.

  • Density-of-states in pentacene from the electrical characteristics of thin-film transistors

     Puigdollers Gonzalez, Joaquin; Marsal Vinade, Albert; Cheylan, S.; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Organic electronics
    Date of publication: 2010-08
    Journal article

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    Interchain and intrachain emission branching in polymer light-emitting diode doped by organic molecules  Open access

     Krautz, D.; Lunedei, E.; Puigdollers Gonzalez, Joaquin; Badenes, Gonçal; Alcubilla Gonzalez, Ramon; Cheylan, S.
    Applied physics letters
    Date of publication: 2010-01-18
    Journal article

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    A blend of the polymer poly 2- 2-ethylhexyloxy -5-methoxy-1,4-phenylenevinylene MEH-PPV and the electron-transport molecule tris- 8-hydroxyquinoline aluminum Alq3 has been investigated by means of electroluminescence and fluorescence spectroscopy, upon variation of the Alq3 content in the blend.Adecreased interchain emission is observed upon increasing Alq3 content, due to lower packing of the MEH-PPV chains which leads to a reduction in the interchain interaction, excimer formation, and emission probability. A branching of MEH-PPV interchain and intrachain emissive contributions is clearly time resolved and analyzed as a function of the Alq3 content. At high doping concentration, direct emission from Alq3 molecules is observed.

  • Study of Organic Semiconductors for Device Applications

     Stella, Marco
    Defense's date: 2010-01-12
    Universitat de Barcelona (UB)
    Theses

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  • Analysis, diagnosis and fault detection in photovoltaic systems

     Chouder, Aissa
    Defense's date: 2010-02-09
    Department of Electronic Engineering, Universitat Politècnica de Catalunya
    Theses

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  • Oxidos metálicos nanoestructurados y substratos nanotexturados para células solares orgánicas

     Alcubilla Gonzalez, Ramon; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
    Participation in a competitive project

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  • INNDISOL

     Martin Garcia, Isidro; Ortega Villasclaras, Pablo Rafael; Puigdollers Gonzalez, Joaquin; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon; Voz Sanchez, Cristobal
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  • Nanophotonics for Energy Efficiency

     Puigdollers Gonzalez, Joaquin; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Orpella Garcia, Alberto; Ortega Villasclaras, Pablo Rafael; Bermejo Broto, Alexandra; Alcubilla Gonzalez, Ramon
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  • Optoelectronic properties of CuPc thin films deposited at different substrate temperatures

     Pirriera, Della M; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Stella, M; Bertomeu Balaguero, Joan; Alcubilla Gonzalez, Ramon
    Journal of physics D. Applied physics
    Date of publication: 2009-07
    Journal article

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  • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature

     Puigdollers Gonzalez, Joaquin; Pirriera, Della M; Marsal Vinade, Albert; Orpella Garcia, Alberto; Cheylan, Stephanie; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Thin solid films
    Date of publication: 2009-10
    Journal article

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  • A comparative study of hydrogen- and hydroxyl-related pentacene defect formation in thin films prepared by Langmuir-Blodgett technique and thermal evaporation

     Gmucova, K; Weis, M; Pirriera, Della M; Puigdollers Gonzalez, Joaquin
    Physica status solidi A. Applications and materials science (Print edition)
    Date of publication: 2009-07
    Journal article

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  • Tecnología de semiconductores orgánicos: fabricación de dispositivos electrónicos en aulas docentes

     Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Ortega Villasclaras, Pablo Rafael; Martin Garcia, Isidro
    IEEE - RITA (Revista iberoamericana de tecnologías del aprendizaje)
    Date of publication: 2009-02
    Journal article

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  • Density of Bandgap States in Copper Phthalocyanine Thin-Films measured from the Temperature Dependence of Field-Effect Structures

     Puigdollers Gonzalez, Joaquin
    International Conference on Materials for Advanced Technologies 2009
    Presentation's date: 2009-07-01
    Presentation of work at congresses

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  • Prsentacio resultats recerca

     Puigdollers Gonzalez, Joaquin
    International Thin Film Transistor Conference
    Presentation's date: 2009-03-05
    Presentation of work at congresses

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  • AVANCES EN TECNOLOGIA DE CELULAS SOLARES FOTOVOLTAICAS (TECSOL)

     Martin Garcia, Isidro; Puigdollers Gonzalez, Joaquin; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
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  • SMART LIGHT COLLECTING SYSTEM FOR THE EFFICIENCY ENHANCEMENT OF SOLAR CELLS

     Martin Garcia, Isidro; Alcubilla Gonzalez, Ramon; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
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  • Optical Stability of Small-Molecule Thin-Films Determined by Photothermal Deflection Spectroscopy

     Pirriera, Monica Della; Puigdollers Gonzalez, Joaquin; Cristoval, Voz; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    International Materials Research Congress
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    Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs  Open access

     Silvestre Berges, Santiago; Puigdollers Gonzalez, Joaquin; Boronat Moreiro, Alfredo; Castañer Muñoz, Luis Maria
    Spanish Conference on Electron Devices
    Presentation's date: 2009-02-11
    Presentation of work at congresses

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    Some sputtering processes of GaAs and Ti onto glass, c-Si and c-GaAs substrates have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents first results concerning the optical and structural properties of the different deposited thin films.

  • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks

     Orpella Garcia, Alberto; Blanqué, Servane; Roiati, V.; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation of work at congresses

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  • Density of BandGap States in Pentacene measured from the temperature dependence of thin-film transistors

     Puigdollers Gonzalez, Joaquin
    International Conference on Organic Electronics
    Presentation's date: 2009-06-16
    Presentation of work at congresses

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  • Density of states in organic semiconductors from TFTs electrical measurements

     Puigdollers Gonzalez, Joaquin
    Spanish Conference on Electron Devices
    Presentation's date: 2009-02-12
    Presentation of work at congresses

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  • Determination of the Density of States in N-type organic Thin-Film Transistors

     Puigdollers Gonzalez, Joaquin; Ortega Villasclaras, Pablo Rafael; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    International Thin Film Transistor Conference
    Presentation of work at congresses

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  • Método para la fabricación de una célula solar de silicio de banda intermedia

     Puigdollers Gonzalez, Joaquin; Silvestre Berges, Santiago; Castañer Muñoz, Luis Maria; Martí, Vega A; Luque, A; Antolín, E; Olea, J; Pastor, D; Martil, Ignacio
    Date of request: 2009-02-19
    Invention patent

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    Método para la fabricación de una célula solar de silicio de banda intermedia.

    Es posible crear materiales de banda intermedia en silicio mediante la implantación iónica en dosis elevadas de elementos que produzcan centros profundos en el silicio. Sin embargo, el material de banda intermedia (4) se crea en la superficie de la oblea implantada (7) planteándose una dificultad técnica ya que, para fabricar una célula solar completa, resulta necesario envolver este material de banda intermedia entre un semiconductor de tipo p (5) y otro de tipo n (6) utilizando un proceso de baja temperatura que evite la segregación y formación de clústeres del elemento implantado. En esta patente, esta dificultad se resuelve creando la estructura p n mediante la deposición de capas de silicio amorfo hidrogenado de calidad a baja temperatura.

  • Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C

     Muñoz, D; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Villar, F; Bertomeu Balaguero, Joan; Andreu, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P
    Thin solid films
    Date of publication: 2008-01
    Journal article

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  • Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet - art. no. 096110

     Cheylan, Stephanie; Puigdollers Gonzalez, Joaquin; Bolink, H J; Coronado, E; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon; Badenes, G
    Journal of applied physics
    Date of publication: 2008-05
    Journal article

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  • Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

     Ferre, R; Orpella Garcia, Alberto; Munoz, D; Martin Garcia, Isidro; Recart, F; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Cabarrocas, Roca I P; Alcubilla Gonzalez, Ramon
    Progress in photovoltaics
    Date of publication: 2008-03
    Journal article

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  • Defect states in pentacene thin films prepared by thermal evaporation and Langmuir-Blodgett technique

     Nadazdy, V; Durny, R; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Cheylan, Stephanie; Weis, M
    Journal of non-crystalline solids
    Date of publication: 2008-05
    Journal article

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  • Density of states in organic TFTs

     Puigdollers Gonzalez, Joaquin
    2nd Meeting on Organic Photovoltaic and Optoelectronic Devices
    Presentation's date: 2008-04-14
    Presentation of work at congresses

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  • Laser fired contacts on amorphous silicon deposited by hot-wire cvd on crystalline silicon

     Blanque, S; Voz Sanchez, Cristobal; Muñoz, D; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    23rd Europeran Photovoltaic Solar Energy Conference
    Presentation of work at congresses

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  • Determinacion de la densidad de estados en semiconductores orgánicos a partir de las medidas eléctricas en TFTs

     Puigdollers Gonzalez, Joaquin
    Workshop on Organic Electronic Devices
    Presentation's date: 2008-12-12
    Presentation of work at congresses

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  • Premio a los mejores Pòsters del VIII Congreso TAEE

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Martin Garcia, Isidro; Orpella Garcia, Alberto; Vetter, Michael; Alcubilla Gonzalez, Ramon
    Award or recognition

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  • Electrical and Optical Properties of PTCDI-C13 for photovoltaic applications

     Puigdollers Gonzalez, Joaquin
    1st International Symposium on Flexible Organic Electronics
    Presentation's date: 2008-07-10
    Presentation of work at congresses

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  • Tecnología electrónica de semiconductores orgánicos: fabricación de transistores en aulas docentes

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Vetter, Michael; Alcubilla Gonzalez, Ramon; Martin Garcia, Isidro; Orpella Garcia, Alberto
    Congreso de Tecnologías Aplicadas a la Enseñanza de la Electrónica
    Presentation's date: 2008-07-03
    Presentation of work at congresses

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