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  • Restraints in low dimensional organic semiconductor devices at high current densities

     Pfattner, Raphael; Moreno Sierra, Cesar; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon; Rovira Angulo, Concepció; Puigdollers Gonzalez, Joaquin; Mas Torrent, Marta
    Organic electronics
    Date of publication: 2014-01
    Journal article

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    The understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work the performance of organic thin-film and single crystal field-effect transistors with the same active material was studied in detail focusing on the high current density regime, where a pronounced non-hysteretic maximum in the transconductance was found. Interestingly, in this operation mode for both, thin films and single crystals, comparable densities of free and gate-induced charge carriers were estimated. Kelvin probe microscopy was used to measure the contact potential difference and the electrical field along the transistor channel during device operation exhibiting the formation of local space charges in the high current density regime. © 2013 Elsevier B.V. All rights reserved.

  • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

     Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Galindo Lorente, Sergi; Alcubilla Gonzalez, Ramon; Bertomeu Balaguero, Joan; Antony, Aldrin
    Thin solid films
    Date of publication: 2014-03-31
    Journal article

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    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. (C) 2013 Elsevier B.V. All rights reserved.

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. (C) 2013 Elsevier B.V. All rights reserved.

  • A compact tetrathiafulvalene-benzothiadiazole dyad and its highly symmetrical charge-transfer salt: Ordered donor p-stacks closely bound to their acceptors

     Geng, Yan; Pfattner, Raphael; Campos García, Antonio; Hauser, Jürg; Laukhin, Vladimir N.; Puigdollers Gonzalez, Joaquin; Veciana Miró, Jaume; Mas Torrent, Marta; Rovira Angulo, Concepció; Decurtins, Silvio; Liu, Shixia
    Chemistry: a european journal
    Date of publication: 2014-06-02
    Journal article

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    A compact and planar donor-acceptor molecule 1 comprising tetrathiafulvalene (TTF) and benzothiadiazole (BTD) units has been synthesised and experimentally characterised by structural, optical, and electrochemical methods. Solution-processed and thermally evaporated thin films of 1 have also been explored as active materials in organic field-effect transistors (OFETs). For these devices, hole field-effect mobilities of µFE=(1. 3±0.5)×10-3 and (2.7±0.4)×10-3 cm2 V s-1 were determined for the solution-processed and thermally evaporated thin films, respectively. An intense intramolecular charge-transfer (ICT) transition at around 495 nm dominates the optical absorption spectrum of the neutral dyad, which also shows a weak emission from its ICT state. The iodine-induced oxidation of 1 leads to a partially oxidised crystalline charge-transfer (CT) salt {(1)2I3}, and eventually also to a fully oxidised compound {1I3} 1/2I2. Single crystals of the former CT compound, exhibiting a highly symmetrical crystal structure, reveal a fairly good room temperature electrical conductivity of the order of 2 S cm-1. The one-dimensional spin system bears compactly bonded BTD acceptors (spatial localisation of the LUMO) along its ridge. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    A compact and planar donor-acceptor molecule 1 comprising tetrathiafulvalene (TTF) and benzothiadiazole (BTD) units has been synthesised and experimentally characterised by structural, optical, and electrochemical methods. Solution-processed and thermally evaporated thin films of 1 have also been explored as active materials in organic field-effect transistors (OFETs). For these devices, hole field-effect mobilities of µFE=(1. 3±0.5)×10-3 and (2.7±0.4)×10-3 cm2 V s-1 were determined for the solution-processed and thermally evaporated thin films, respectively. An intense intramolecular charge-transfer (ICT) transition at around 495 nm dominates the optical absorption spectrum of the neutral dyad, which also shows a weak emission from its ICT state. The iodine-induced oxidation of 1 leads to a partially oxidised crystalline charge-transfer (CT) salt {(1)2I3}, and eventually also to a fully oxidised compound {1I3} 1/2I2. Single crystals of the former CT compound, exhibiting a highly symmetrical crystal structure, reveal a fairly good room temperature electrical conductivity of the order of 2 S cm-1. The one-dimensional spin system bears compactly bonded BTD acceptors (spatial localisation of the LUMO) along its ridge. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  • Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Asensi López, José Miguel; Galindo Lorente, Sergi; Cheylan, S.; Pacios, R.; Ortega Villasclaras, Pablo Rafael; Alcubilla Gonzalez, Ramon
    Organic electronics
    Date of publication: 2013-06
    Journal article

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    This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the behavior of this type of devices. It is experimentally shown that this recombination term determines the slope of the current-voltage characteristic at the short-circuit condition. The variation of this dynamic resistance with the light intensity can be interpreted considering a dominant first-order recombination process. Finally, an analytical model under a constant electric field approximation is presented that can be used to calculate the charge carrier collection efficiency of the device. This model can be also used to estimate an effective mobility-lifetime product, which is characteristic of the quality of the active layer.

    This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the behavior of this type of devices. It is experimentally shown that this recombination term determines the slope of the current–voltage characteristic at the short-circuit condition. The variation of this dynamic resistance with the light intensity can be interpreted considering a dominant first-order recombination process. Finally, an analytical model under a constant electric field approximation is presented that can be used to calculate the charge carrier collection efficiency of the device. This model can be also used to estimate an effective mobility–lifetime product, which is characteristic of the quality of the active layer.

  • Organic solar cells: correlation between performance and density-of-states

     Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal
    Baltic Polymer Symposium
    Presentation's date: 2013-09-19
    Presentation of work at congresses

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  • Influence of exciton blocking layer in small molecule organic solar cells

     Galindo Lorente, Sergi; Ahmadpur Sayyar, Mehrad; Marsal Garvi, Luis Francisco; Vikas, L. S.; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
    Spanish Conference on Electron Devices
    Presentation's date: 2013-02-14
    Presentation of work at congresses

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    Postprint (author’s final draft)

  • Determination of the density-of-states in thin-films of organic semiconductors

     Puigdollers Gonzalez, Joaquin
    International Conference on Optoelectronic Materials and Thin Films for Advanced Technology
    Presentation's date: 2013-01-04
    Presentation of work at congresses

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    Organic se111iconductors have been successfully proposed to fabricate different electronic devices because of their potential in large area and Iow-cost applications. Moreover, organic semiconductors even allow the fabrication of flexible devices. Examples of these applications cover solar cells, thin-film transistors (TFT) and lightemitting diodes. Nowadays, the electrical performance of the bests organic thin-film transistors (OTFT) fabricated from small-molecule organic semiconductors is already comparable to that obtained with hydrogenated amorphous silicon (a-Si:H), the standard semiconductor used to fabricate TFTs for display applications. Impressive achievements have been also obtained in the field of organic solar cells. Recently, Heliatek reported small-molecule organic solar cells with efficiency around 9.8% on lcm2. The optoelectronic properties of the aforementioned devices depend largely on the density of states (DOS) in the band gap of the active semiconductor layers. The DOS distribution in organic semiconductors determines the electrical transport, photosensitivity, doping efficiency and, at the end, impairs the device performance. The study of defects with states within the band gap is of great interest, since they act as traps and recombination centers with a strong iníluence in the electrical behaviour of the fabricated devices. Experimental information on the distribution of defects cannot be obtained in a straightforward way. Different teclmiques have been used for extracting information about the energy distribution of the DOS in thin-film semiconductors. In this talk we will review some of the results obtained using teclmiques based on thermal emission measurements (in field-effect structures). On the other hand, the determination of the DOS obtained from the measurement of the weak sub-gap optical absorption will be also discussed.

  • Model for the charge carrier collection in organic small-molecule solar cells

     Galindo Lorente, Sergi; Ahmadpour Sayyar, Mehrad; Voz Sanchez, Cristobal; Asensi, J.M.; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    E-MRS Spring Meeting
    Presentation's date: 2013-05-27
    Presentation of work at congresses

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  • Progress in silicon heterojunction solar cell fabrication with rear laser-fired contacts

     Morales Vilches, Ana Belen; Voz Sanchez, Cristobal; Colina Brito, Monica Alejandra; Lopez Rodriguez, Gema; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Garcia Rodriguez, Miguel; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2013-02
    Presentation of work at congresses

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    Silicon Heterojunction (SHJ) solar cells are one of the most promising alternatives for high efficiency industrially feasible solar cells. The structure of these devices is based on hydrogenated amorphous silicon (a-Si:H) layers deposited at low temperature on crystalline silicon (c-Si) substrates. This fabrication process reduces the thermal stress on the substrate and is compatible with thinner wafers. In this work, we present our recent progress in the fabrication of SHJ solar cells on p-type c-Si wafers. The deposition conditions of hydrogenated amorphous silicon-carbon (a-SiCx:H) layers obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) are optimized. We have also applied a novel laser-firing process to contact the rear side of the fabricated devices. In this way, solar cells with point contacts through rear passivating layers can be fabricated without any photolithographic step.

  • Simulation of organic inverter

     Papadopoulos, N. P.; Marsal Vinade, Albert; Picos, Rodrigo; Puigdollers Gonzalez, Joaquin; Hatzopoulos, A. A.
    Solid-state electronics
    Date of publication: 2012-02-02
    Journal article

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    Pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) have been used as organic semiconductors for the fabrication of p-type and n-type organic thin-film transistors (OTFTs). Both types of semiconductors are well-established and demonstrate good performance in single devices, but few competitive results have been reported in complementary circuits. In this manuscript, we show the fabrication, electrical characterization and simulation of an organic complementary inverter using pentacene and PTCDI-C13 as active semiconductors. Simulation was done using a model with physical aspects. We report good fitting of p-type and n-type parameters for the OTFT model and good results for DC transfer characteristics of the organic complementary inverter. The fitting of the parameters of the OTFT model is performed using an optimized parameter extraction technique which is using fuzzy logic to adjust the parameters to its optimal value.

  • Comparison between the density-of-states of picene transistors measured in air and under vacuum

     Voz Sanchez, Cristobal; Marsal Vinade, Albert; Moreno Sierra, Cesar; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    Synthetic metals
    Date of publication: 2012-01
    Journal article

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    Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect mobilities up to 1.3 cm2 V−1 s−1 and on/off ratios above 105 in ambient conditions. These devices have been electrically characterized over the temperature range 300–360 K in air and also under vacuum conditions. In particular, the thermal activation energy of the channel conductance as a function of the gate bias has been measured. The dependence of the activation energy on the gate bias corresponds to a gradual shift of the Fermi level towards the HOMO level as more gap states are filled by trapped holes. The density-of-states can be estimated from the derivative of the activation energy with respect to gate bias. The calculated density-of-states is compared for devices measured in air and under vacuum conditions. These results can help to understand the gas sensing capability of picene, together with its enhanced electrical performance after air exposure.

  • Organic metal¿organic semiconductor blended contacts in single crystal field-effect transistors

     Pfattner, Raphael; Mas Torrent, Marta; Moreno, Cesar; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Bilotti, I.; Venuti, E.; Brillante, Aldo; Laukhin, Vladimir N.; Veciana Miró, Jaume; Rovira Angulo, Concepció
    Journal of materials chemistry
    Date of publication: 2012-06-25
    Journal article

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  • Ephocell project: smart light collecting system for the efficiency enhancement of solar cells - ray trace modeling of system

     Aubouy, Laurent; Gutiérrez-Tauste, D.; Della Pirriera, Monica; Noriega, G.; Di Lorenzo, M.L.; Avella, M.; Errico, M.E.; Gentile, G.; Kennedy, M.; Doran, J.; Norton, B.; Ahmed, H.; Baluschev, S.; Bistué Guardiola, J.; Hervera, F.; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Daren, S.; Solomon-Tsvetkov, F.; Pashov, A.
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation's date: 2012-09-25
    Presentation of work at congresses

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    PV cell efficiency is limited partly due to the spectral mismatch between the solar spectrum and the PV absorption properties. PV conversion efficiency is enhanced by external modulation of the incident irradiance, by means of photon downshifting (DS) and upconversion (UC). A ray-trace modelling tool is presented to simulate the luminescent DS and UC processes and thereby optimise the doping concentrations and geometric dimensions of the DS and UC layers.

  • Work function measurements of transparent conducting ZITO films by Kelvin Probe Microscopy

     Moreno Sierra, Cesar; Galindo Lorente, Sergi; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Antony, Aldrin; Carreras Seguí, Paz; Bertomeu Balaguero, Joan; Vikas, L. S.; Jayaraj, M. K.
    International Workshop on Nanotechnology in Solar and Energy Storage Applications
    Presentation's date: 2012-02-24
    Presentation of work at congresses

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  • Integration of up converters/down shifters in PV systems

     Puigdollers Gonzalez, Joaquin; Galindo Lorente, Sergi; Voz Sanchez, Cristobal; Della Pirriera, Monica; Gutierrez, D.
    Generation PV cells, Cluster 3 Meeting & Ephocell: Luminiscent Solar Concentrators Workshop
    Presentation's date: 2012-10-03
    Presentation of work at congresses

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  • Lumogen violet dye as luminiscent down-shifting layer for C-silicon solar cells

     Ahmed, H.; Kennedy, M.; Confrey, T.; Doran, J.; McCormack, S.J.; Galindo Lorente, Sergi; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation's date: 2012-09-25
    Presentation of work at congresses

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    In this investigation Naphtalimide based Lumogen Violet organic dye [BASF] is characterized for inclusion in luminescent downshifting (LDS) layers. A PV device made up of an LDS layer of Lumogen Violet deposited on top of a crystalline silicon cell has been fabricated to improve its power conversion efficiency. External quantum efficiency measurements and outdoor tests for the PV/LDS devices are discussed. An analytical model was also developed to compare experiment results with the model predictions.

  • Células solares orgánicas basadas en estructura P-I-N

     Puigdollers Gonzalez, Joaquin
    Participation in a competitive project

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  • Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor

     Moreno Sierra, Cesar; Pfattner, Raphael; Mas Torrent, Marta; Puigdollers Gonzalez, Joaquin; Bromley, Stephan; Rovira Angulo, Concepció; Alcubilla Gonzalez, Ramon; Veciana Miró, Jaume
    Journal of materials chemistry B
    Date of publication: 2011-11-16
    Journal article

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    Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon.

  • Células fotovoltaicas con un rendimiento del 20.5%

     Ortega Villasclaras, Pablo Rafael; Lopez Rodriguez, Gema; Orpella Garcia, Alberto; Martin Garcia, Isidro; Colina Brito, Monica Alejandra; Voz Sanchez, Cristobal; Bermejo Broto, Alexandra; Puigdollers Gonzalez, Joaquin; Garcia Molina, Francisco Miguel; Alcubilla Gonzalez, Ramon
    Solar News
    Date of publication: 2011-03-01
    Journal article

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    Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial con respecto a los rendimientos habituales en células comerciales que sitúa en un 15%, y la cuota más elevada a la que se ha llegado hasta ahora en España. En estos momentos trabajan en mejoras que las hagan accesibles industrialmente. El avance, tras años de investigación, consiste en minimizar los diferentes mecanismos de pérdidas que influyen en el cómputo de la eficiencia de conversión fotovoltaica.

  • Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties

     Oton, Francisco; Pfattner, Raphael; Pavlica, Egon; Olivier, Yoann; Bratina, Gvido; Cornil, Jerome; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Fontrodona, Xavier; Mas Torrent, Marta; Veciana Miró, Jaume; Rovira Angulo, Concepció
    Crystengcomm
    Date of publication: 2011
    Journal article

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  • Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors

     Oton, Francisco; Pfattner, Raphael; Pavlica, Egon; Olivier, Yoann; Moreno, Evelyn; Puigdollers Gonzalez, Joaquin; Bratina, Gvido; Cornil, Jerome; Fontrodona, Xavier; Mas Torrent, Marta; Veciana Miró, Jaume; Rovira Angulo, Concepció
    Chemistry of materials
    Date of publication: 2011-02-08
    Journal article

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  • Electronic Density of States of DP-PTCDI Thin-films grown by thermal vacuum sublimation

     Marsal Vinade, Albert; Galindo Lorente, Sergi; Puigdollers Gonzalez, Joaquin; Cheylan, S.; Alcubilla Gonzalez, Ramon
    International Conference on Organic Electronics
    Presentation's date: 2011-06-22
    Presentation of work at congresses

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  • Access to the full text
    Crystalline silicon solar cells beyond 20% efficiency  Open access

     Ortega Villasclaras, Pablo Rafael; Lopez Rodriguez, Gema; Orpella Garcia, Alberto; Colina Brito, Monica Alejandra; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Bermejo Broto, Alexandra; Puigdollers Gonzalez, Joaquin; Garcia Molina, Miguel; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2011-02-08
    Presentation of work at congresses

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    —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have been achieved using thermal SiO2 as a rear passivation layer on 2 cm x 2 cm solar cells with 0.45 cm Fz c-Si substrates. Efficiencies up to 22% are expected for material resistivities in the 0.4–5 cm using an optimized rear contact grid

  • Low voltage operating complementary inverters fabricated at low temperature

     Puigdollers Gonzalez, Joaquin; Marsal Vinade, Albert; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2011-02-09
    Presentation of work at congresses

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  • CARACTERIZACIÓN DE MATERIALES SEMICONDUCTORES ORGÁNICOS PARA EL DISEÑO Y FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS

     Della Pirriera, Mónica Beatriz
    Defense's date: 2011-10-26
    Department of Electronic Engineering, Universitat Politècnica de Catalunya
    Theses

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  • Q-00012

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
    Participation in a competitive project

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  • Access to the full text
    Interchain and intrachain emission branching in polymer light-emitting diode doped by organic molecules  Open access

     Krautz, D.; Lunedei, E.; Puigdollers Gonzalez, Joaquin; Badenes, Gonçal; Alcubilla Gonzalez, Ramon; Cheylan, S.
    Applied physics letters
    Date of publication: 2010-01-18
    Journal article

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    A blend of the polymer poly 2- 2-ethylhexyloxy -5-methoxy-1,4-phenylenevinylene MEH-PPV and the electron-transport molecule tris- 8-hydroxyquinoline aluminum Alq3 has been investigated by means of electroluminescence and fluorescence spectroscopy, upon variation of the Alq3 content in the blend.Adecreased interchain emission is observed upon increasing Alq3 content, due to lower packing of the MEH-PPV chains which leads to a reduction in the interchain interaction, excimer formation, and emission probability. A branching of MEH-PPV interchain and intrachain emissive contributions is clearly time resolved and analyzed as a function of the Alq3 content. At high doping concentration, direct emission from Alq3 molecules is observed.

  • Density-of-states in pentacene from the electrical characteristics of thin-film transistors

     Puigdollers Gonzalez, Joaquin; Marsal Vinade, Albert; Cheylan, S.; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Organic electronics
    Date of publication: 2010-08
    Journal article

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  • Electronic density of states of DP-PTCDI thin-films grown by thermal vacuum sublimation

     Puigdollers Gonzalez, Joaquin; Marsal Vinade, Albert; Voz Sanchez, Cristobal; Della Pirriera, Monica; Cheylan, S.; Alcubilla Gonzalez, Ramon
    International Conference on Synthetic Materials
    Presentation's date: 2010-07-06
    Presentation of work at congresses

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  • Oxidos metálicos nanoestructurados y substratos nanotexturados para células solares orgánicas

     Alcubilla Gonzalez, Ramon; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
    Participation in a competitive project

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  • INNDISOL

     Martin Garcia, Isidro; Ortega Villasclaras, Pablo Rafael; Puigdollers Gonzalez, Joaquin; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon; Voz Sanchez, Cristobal
    Participation in a competitive project

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  • Nanophotonics for Energy Efficiency

     Puigdollers Gonzalez, Joaquin; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Orpella Garcia, Alberto; Ortega Villasclaras, Pablo Rafael; Bermejo Broto, Alexandra; Alcubilla Gonzalez, Ramon
    Participation in a competitive project

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  • Study of Organic Semiconductors for Device Applications

     Stella, Marco
    Defense's date: 2010-01-12
    Universitat de Barcelona (UB)
    Theses

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  • Optoelectronic properties of CuPc thin films deposited at different substrate temperatures

     Pirriera, Della M; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Stella, M; Bertomeu Balaguero, Joan; Alcubilla Gonzalez, Ramon
    Journal of physics D. Applied physics
    Date of publication: 2009-07
    Journal article

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  • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature

     Puigdollers Gonzalez, Joaquin; Pirriera, Della M; Marsal Vinade, Albert; Orpella Garcia, Alberto; Cheylan, Stephanie; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Thin solid films
    Date of publication: 2009-10
    Journal article

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  • A comparative study of hydrogen- and hydroxyl-related pentacene defect formation in thin films prepared by Langmuir-Blodgett technique and thermal evaporation

     Gmucova, K; Weis, M; Pirriera, Della M; Puigdollers Gonzalez, Joaquin
    Physica status solidi A. Applications and materials science (Print edition)
    Date of publication: 2009-07
    Journal article

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  • Tecnología de semiconductores orgánicos: fabricación de dispositivos electrónicos en aulas docentes

     Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Ortega Villasclaras, Pablo Rafael; Martin Garcia, Isidro
    IEEE - RITA (Revista iberoamericana de tecnologías del aprendizaje)
    Date of publication: 2009-02
    Journal article

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  • Método para la fabricación de una célula solar de silicio de banda intermedia

     Puigdollers Gonzalez, Joaquin; Silvestre Berges, Santiago; Castañer Muñoz, Luis Maria; Martí, Vega A; Luque, A; Antolín, E; Olea, J; Pastor, D; Martil, Ignacio
    Date of request: 2009-02-19
    Invention patent

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    Método para la fabricación de una célula solar de silicio de banda intermedia.

    Es posible crear materiales de banda intermedia en silicio mediante la implantación iónica en dosis elevadas de elementos que produzcan centros profundos en el silicio. Sin embargo, el material de banda intermedia (4) se crea en la superficie de la oblea implantada (7) planteándose una dificultad técnica ya que, para fabricar una célula solar completa, resulta necesario envolver este material de banda intermedia entre un semiconductor de tipo p (5) y otro de tipo n (6) utilizando un proceso de baja temperatura que evite la segregación y formación de clústeres del elemento implantado. En esta patente, esta dificultad se resuelve creando la estructura p n mediante la deposición de capas de silicio amorfo hidrogenado de calidad a baja temperatura.

  • SMART LIGHT COLLECTING SYSTEM FOR THE EFFICIENCY ENHANCEMENT OF SOLAR CELLS

     Martin Garcia, Isidro; Alcubilla Gonzalez, Ramon; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin
    Participation in a competitive project

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  • AVANCES EN TECNOLOGIA DE CELULAS SOLARES FOTOVOLTAICAS (TECSOL)

     Martin Garcia, Isidro; Puigdollers Gonzalez, Joaquin; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    Participation in a competitive project

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  • Prsentacio resultats recerca

     Puigdollers Gonzalez, Joaquin
    International Thin Film Transistor Conference
    Presentation's date: 2009-03-05
    Presentation of work at congresses

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  • Density of Bandgap States in Copper Phthalocyanine Thin-Films measured from the Temperature Dependence of Field-Effect Structures

     Puigdollers Gonzalez, Joaquin
    International Conference on Materials for Advanced Technologies 2009
    Presentation's date: 2009-07-01
    Presentation of work at congresses

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  • Density of BandGap States in Pentacene measured from the temperature dependence of thin-film transistors

     Puigdollers Gonzalez, Joaquin
    International Conference on Organic Electronics
    Presentation's date: 2009-06-16
    Presentation of work at congresses

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  • Determination of the Density of States in N-type organic Thin-Film Transistors

     Puigdollers Gonzalez, Joaquin; Ortega Villasclaras, Pablo Rafael; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    International Thin Film Transistor Conference
    Presentation of work at congresses

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  • Access to the full text
    Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs  Open access

     Silvestre Berges, Santiago; Puigdollers Gonzalez, Joaquin; Boronat Moreiro, Alfredo; Castañer Muñoz, Luis Maria
    Spanish Conference on Electron Devices
    Presentation's date: 2009-02-11
    Presentation of work at congresses

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    Some sputtering processes of GaAs and Ti onto glass, c-Si and c-GaAs substrates have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents first results concerning the optical and structural properties of the different deposited thin films.

  • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks

     Orpella Garcia, Alberto; Blanqué, Servane; Roiati, V.; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation of work at congresses

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  • Optical Stability of Small-Molecule Thin-Films Determined by Photothermal Deflection Spectroscopy

     Pirriera, Monica Della; Puigdollers Gonzalez, Joaquin; Cristoval, Voz; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    International Materials Research Congress
    Presentation of work at congresses

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  • Density of states in organic semiconductors from TFTs electrical measurements

     Puigdollers Gonzalez, Joaquin
    Spanish Conference on Electron Devices
    Presentation's date: 2009-02-12
    Presentation of work at congresses

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  • Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C

     Muñoz, D; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Villar, F; Bertomeu Balaguero, Joan; Andreu, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P
    Thin solid films
    Date of publication: 2008-01
    Journal article

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  • Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet - art. no. 096110

     Cheylan, Stephanie; Puigdollers Gonzalez, Joaquin; Bolink, H J; Coronado, E; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon; Badenes, G
    Journal of applied physics
    Date of publication: 2008-05
    Journal article

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