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1 to 50 of 104 results
  • Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

     Morales Vilches, Ana Belen; Voz Sanchez, Cristobal; Colina Brito, Monica Alejandra; Lopez Rodriguez, Gema; Martin Garcia, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    Energy procedia
    Date of publication: 2014-01-31
    Journal article

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    The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the transparent conductive oxide layer could also significantly modify the band structure at the emitter. In this work, we study the particular case of p-type crystalline silicon substrates with a stack of n-doped and intrinsic amorphous silicon layers deposited by Plasma-Enhanced Chemical Vapor Deposition. The front electrode was an indium-tin-oxide layer deposited by Sputtering. The Quasi-Steady- State Photoconductance technique has been used to characterize the emitter quality by measuring the effective lifetime and the implicit open-circuit voltage. These measurements confirmed a strong degradation of the heterojunction after depositing the indium-tin-oxide layer. However, it is also shown that the initial degradation could be completely recovered by an adequate thermal treatment. In this sense, annealing times from 10 to 90 minutes at temperatures ranging from 100 to 160 °C have been studied, both in vacuum and inside an oven.

  • Numerical simulations of rear point-contacted solar cells pn 2.2 Wcm p-type c-Si substrates

     Lopez Gonzalez, Juan Miguel; Martin Garcia, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    Progress in photovoltaics
    Date of publication: 2013-07
    Journal article

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    Rear surface of high-efficiency crystalline silicon solar cells is based on a combination of dielectric passivation and point-like contacts. In this work, we develop a 3D model for these devices based on 2.2¿Ocm p-type crystalline silicon substrates. We validate the model by comparison with experimental results allowing us to determine an optimum design for the rear pattern. Additionally, the 3D model results are compared with the ones deduced from a simpler and widely used 1D model. Although the maximum efficiency predicted by both models is approximately the same, large deviations are observed in open-circuit voltage and fill factor. 1D simulations overestimate open-circuit voltage because Dember and electrochemical potential drops are not taken into account. On the contrary, fill factor is underestimated because of higher ohmic losses along the base when 1D analytical model is used. These deviations are larger for relatively low-doped substrates, as the ones used in the experimental samples reported hereby, and poor passivated contacts. As a result, 1D models could mislead to too short optimum rear contact spacing.

  • Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process

     Boronat Moreiro, Alfredo; Silvestre Berges, Santiago; Orpella Garcia, Alberto
    Journal of vacuum science and technology. B, Nanotechnology & microelectronics
    Date of publication: 2013-09-12
    Journal article

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    A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing process and the electrical response of the metal¿semiconductor contact are characterized.

  • Laser processing of Al2O3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells

     Martin Garcia, Isidro; Ortega Villasclaras, Pablo Rafael; Colina Brito, Monica Alejandra; Orpella Garcia, Alberto; López, Gema; Alcubilla Gonzalez, Ramon
    Progress in photovoltaics
    Date of publication: 2013-08
    Journal article

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    We explore the potential of laser processing aluminium oxide (Al 2O3)/amorphous silicon carbide (a-SiCx:H) stacks to be used at the rear surface of p-type crystalline silicon (c-Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al2O3 film is introduced into the c-Si, creating p+ regions that allow ohmic contacts with low-surface recombination velocities. At optimum pitch, high-efficiency solar cells are achievable for substrates of 0.5-2.5 O cm. Copyright © 2012 John Wiley & Sons, Ltd. We explore the potential of laser processing aluminium oxide (Al2O3)/amorphous silicon carbide (a-SiC x:H) stacks to be used at the rear surface of p-type crystalline silicon (c-Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, part of the aluminium in the Al 2O3 film is introduced into the c-Si, creating p+ regions that allow ohmic contacts with low-surface recombination velocities.

    We explore the potential of laser processing aluminium oxide (Al2O3)/amorphous silicon carbide (a-SiCx:H) stacks to be used at the rear surface of p-type crystalline silicon (c-Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al2O3 film is introduced into the c-Si, creating p+ regions that allow ohmic contacts with low-surface recombination velocities. At optimum pitch, high-efficiency solar cells are achievable for substrates of 0.5–2.5 Ω cm.

  • Boron diffused emitters passivated with Al2O3 films

     Masmitja Rusinyol, Gerard; Ortega Villasclaras, Pablo Rafael; Lopez Rodriguez, Gema; Calle Martin, Eric; Garcia Molina, Francisco Miguel; Martin Garcia, Isidro; Orpella Garcia, Alberto; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2013
    Presentation of work at congresses

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    In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 O/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation.

    In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation.

  • Progress in silicon heterojunction solar cell fabrication with rear laser-fired contacts

     Morales Vilches, Ana Belen; Voz Sanchez, Cristobal; Colina Brito, Monica Alejandra; Lopez Rodriguez, Gema; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Garcia Rodriguez, Miguel; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2013-02
    Presentation of work at congresses

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    Silicon Heterojunction (SHJ) solar cells are one of the most promising alternatives for high efficiency industrially feasible solar cells. The structure of these devices is based on hydrogenated amorphous silicon (a-Si:H) layers deposited at low temperature on crystalline silicon (c-Si) substrates. This fabrication process reduces the thermal stress on the substrate and is compatible with thinner wafers. In this work, we present our recent progress in the fabrication of SHJ solar cells on p-type c-Si wafers. The deposition conditions of hydrogenated amorphous silicon-carbon (a-SiCx:H) layers obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) are optimized. We have also applied a novel laser-firing process to contact the rear side of the fabricated devices. In this way, solar cells with point contacts through rear passivating layers can be fabricated without any photolithographic step.

  • DopLaCell: a new c-Si solar cell based on laser processing of dielectric films

     Martin Garcia, Isidro; Lopez Gonzalez, Juan Miguel; Colina Brito, Monica Alejandra; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation's date: 2013-10-01
    Presentation of work at congresses

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    In this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser Cell) structure. The resulting fabrication process can be simplified to just four steps: wafer cleaning, film depositions, laser processing and metallization. We used phosphorus-doped silicon carbide stacks (SiCx(n)) and aluminium oxide/silicon carbide (Al2O3/SiCx) stacks for the creation of n+ and p+ regions respectively. As a proof of concept, 1x1 cm2 solar cells were fabricated on 0.45 Wcm p-type substrates with promising results. The main feature of DopLaCell structure is the location of the emitter at the rear surface consisting of a point-like laser processed n+ regions combined with an induced inversion layer in between based on the fixed charge density of the SiCx(n) stacks. Solar cells with distance between rear emitter regions or pitch ranging from 200 to 350 µm are characterized resulting in a strong decrease of Fill Factor (FF) from 75.4 to 59.7 %. Suns-Voc measurements show excellent pseudo-FF (p-FF) values beyond 81% in all devices demonstrating the high quality of laser doping process and the actual limitation of FF by ohmic losses. Device modelling through 3D simulations demonstrates that these ohmic losses are related to the high sheet resistance of the inversion layer induced in-between n+ regions. We conclude that there is room for improvement to fully develop the potential of this new structure, particularly for low resistivity n-type substrates where the high fixed charge densities of Al2O3 can help to improve FF.

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    Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates  Open access

     Lopez Rodriguez, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Colina Brito, Monica Alejandra; Morales Vilches, Ana Belen; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    Beilstein Journal of Nanotechnology
    Date of publication: 2013-11-06
    Journal article

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    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (Seff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

  • Optimization of laser doping processes for the creation of p+ regions from solid dopant sources

     Colina Brito, Monica Alejandra; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Morales Vilches, Ana Belen; Ortega Villasclaras, Pablo Rafael; Lopez Rodriguez, Gema; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon; Sánchez Aniorte, M. Isabel; Molpeceres Alvarez, Carlos
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation's date: 2012-09
    Presentation of work at congresses

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  • Optimization of al2o3 films obtained by ald to passivate p-type c-silicon wafers

     Lopez Rodriguez, Gema; Ortega Villasclaras, Pablo Rafael; Martin Garcia, Isidro; Colina Brito, Monica Alejandra; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation's date: 2012-09
    Presentation of work at congresses

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  • Low recombination n+ regions created by n+ c-Si epitaxial layers and laser processing of phosphorus-doped SiCx films

     Martin Garcia, Isidro; Colina Brito, Monica Alejandra; Orpella Garcia, Alberto; Voz Sanchez, Cristobal; De Vecchi, S.; Desrues, T.; Abolmasov, S.; Roca i Cabarrocas, P.; Alcubilla Gonzalez, Ramon
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation's date: 2012-09
    Presentation of work at congresses

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  • Laser-fired contact optimization in c-Si solar cells

     Ortega Villasclaras, Pablo Rafael; Orpella Garcia, Alberto; Martin Garcia, Isidro; Colina Brito, Monica Alejandra; Lopez Rodriguez, Gema; Voz Sanchez, Cristobal; Sánchez, Isabel; Molpeceres Alvarez, Carlos; Alcubilla Gonzalez, Ramon
    Progress in photovoltaics
    Date of publication: 2012-03
    Journal article

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    In this work we study the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c-Si and mc-Si solar cell fabrication: thermally grown silicon oxide (SiO2), deposited phosphorus-doped amorphous silicon carbide (a-SiCx/H(n)), aluminum oxide (Al2O3) and silicon nitride (SiNx/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm2 have been obtained.

  • Dopado con láser del silicio cristalino: aplicación a emisores selectivos y nuevas estructuras de células solares

     Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon; Martin Garcia, Isidro
    Participation in a competitive project

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  • P-type c-Si solar cells based on rear side laser processing of Al 2O 3/SiC x stacks

     Ortega Villasclaras, Pablo Rafael; Martin Garcia, Isidro; Lopez Rodriguez, Gema; Colina Brito, Monica Alejandra; Orpella Garcia, Alberto; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Solar energy materials and solar cells
    Date of publication: 2012-11
    Journal article

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    Crystalline silicon solar cells beyond 20% efficiency  Open access

     Ortega Villasclaras, Pablo Rafael; Lopez Rodriguez, Gema; Orpella Garcia, Alberto; Colina Brito, Monica Alejandra; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Bermejo Broto, Alexandra; Puigdollers Gonzalez, Joaquin; Garcia Molina, Miguel; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2011-02-08
    Presentation of work at congresses

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    —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have been achieved using thermal SiO2 as a rear passivation layer on 2 cm x 2 cm solar cells with 0.45 cm Fz c-Si substrates. Efficiencies up to 22% are expected for material resistivities in the 0.4–5 cm using an optimized rear contact grid

  • Células fotovoltaicas con un rendimiento del 20.5%

     Ortega Villasclaras, Pablo Rafael; Lopez Rodriguez, Gema; Orpella Garcia, Alberto; Martin Garcia, Isidro; Colina Brito, Monica Alejandra; Voz Sanchez, Cristobal; Bermejo Broto, Alexandra; Puigdollers Gonzalez, Joaquin; Garcia Molina, Francisco Miguel; Alcubilla Gonzalez, Ramon
    Solar News
    Date of publication: 2011-03-01
    Journal article

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    Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial con respecto a los rendimientos habituales en células comerciales que sitúa en un 15%, y la cuota más elevada a la que se ha llegado hasta ahora en España. En estos momentos trabajan en mejoras que las hagan accesibles industrialmente. El avance, tras años de investigación, consiste en minimizar los diferentes mecanismos de pérdidas que influyen en el cómputo de la eficiencia de conversión fotovoltaica.

  • Optimization of the rear point contact scheme of crystalline silicon solar cells using laser-fired contacts

     Ortega Villasclaras, Pablo Rafael; Orpella Garcia, Alberto; López, Gema; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon; Colina Brito, Monica Alejandra; Sánchez Aniorte, M. Isabel; Perales, Francisco; Molpeceres Alvarez, Carlos
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation's date: 2010-09-06
    Presentation of work at congresses

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    This paper is focused on the optimization of the rear contact scheme of p-type c-Si LFC-PERC high efficiency solar cells minimizing base ohmic losses without jeopardize rear passivation. This is carried out optimizing on one hand the LFC laser conditions for minimum point resistance and on the other hand through a proper design of the contact grid layout finding the optimum trade off for a given base resistivity between rear passivation and base resistance. LFC process was carried out through 110 nm thermal SiO2 passivation layer using IR and green lasers. Very low specific contact resistances, 0.1 mcm2 have been achieved independently of the laser used. For optimum rear contacted area fraction efficiencies over 21.5% and 22%, for IR and green lasers respectively are expected in the 0.5-5 cm resistivity range.

  • INNDISOL

     Martin Garcia, Isidro; Ortega Villasclaras, Pablo Rafael; Puigdollers Gonzalez, Joaquin; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon; Voz Sanchez, Cristobal
    Participation in a competitive project

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  • Nanophotonics for Energy Efficiency

     Puigdollers Gonzalez, Joaquin; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Orpella Garcia, Alberto; Ortega Villasclaras, Pablo Rafael; Bermejo Broto, Alexandra; Alcubilla Gonzalez, Ramon
    Participation in a competitive project

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  • Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures

     Orpella Garcia, Alberto; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Physica status solidi C. Current topics in solid state physics
    Date of publication: 2010
    Journal article

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  • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature

     Puigdollers Gonzalez, Joaquin; Pirriera, Della M; Marsal Vinade, Albert; Orpella Garcia, Alberto; Cheylan, Stephanie; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Thin solid films
    Date of publication: 2009-10
    Journal article

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  • Advances in a baseline process towards high efficiency c-Si solar cell fabrication

     Ortega Villasclaras, Pablo Rafael; Lopez, G.; Martin Garcia, Isidro; Bermejo Broto, Alexandra; Blanqué, Servane; Garcia Molina, Miguel; Orpella Garcia, Alberto; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation's date: 2009-02-12
    Presentation of work at congresses

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  • AVANCES EN TECNOLOGIA DE CELULAS SOLARES FOTOVOLTAICAS (TECSOL)

     Martin Garcia, Isidro; Puigdollers Gonzalez, Joaquin; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    Participation in a competitive project

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    Optimization of laser processes in n+Emitter formation for c-Si solar cells  Open access

     Orpella Garcia, Alberto; Martin Garcia, Isidro; Blanqué, Servane; Voz Sanchez, Cristobal; Sánchez Aniorte, M. Isabel; Colina Brito, Monica Alejandra; Molpeceres Alvarez, Carlos; Alcubilla Gonzalez, Ramon
    European Photovoltaic Solar Energy Conference and Exhibition
    Presentation of work at congresses

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    Punctual phosphorus diffused emitters were achieved by laser patterning phosphorus doped a-SiCx:H films deposited by PECVD as a doping source. Two different lasers at wavelengths of 1064 nm and 532 nm were used. Phosphorus diffusion was confirmed by Secondary Ion Mass Spectroscopy. We explored the effect of pulse energy and number of pulses per diffused point. The results show that a fine tune of the energy pulse is critical while the number of pulses has minor effects. Scanning Electron Microscopy (SEM) pictures and optical profilometry showed a laser affected area where the c-Si is melted, ejected and solidified quickly again. Typically, the diameter of the affected area for 1064 nm laser is between two and four times greater than for 532 nm laser. Optimum parameters for both lasers were determined to obtain best J-V curves nearly to ideal diode behavior. Comparing best J-V results, lower emitter saturation current density (Jo) and contact resistance are obtained with 532 nm laser. The improvement in Jo can be related mainly to the smaller affected areas observed by SEM while lower contact resistance can be attributed to that 532 nm laser has a more superficial action resulting in higher phosphorus concentration at the surface. The expected open voltage circuit for finished solar cells using these emitters is in the range of 640 mV for 532 nm laser and 620 mV for 1064 nm one.

  • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks

     Orpella Garcia, Alberto; Blanqué, Servane; Roiati, V.; Martin Garcia, Isidro; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation of work at congresses

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  • Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C

     Muñoz, D; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Villar, F; Bertomeu Balaguero, Joan; Andreu, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P
    Thin solid films
    Date of publication: 2008-01
    Journal article

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  • Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

     Ferre, R; Orpella Garcia, Alberto; Munoz, D; Martin Garcia, Isidro; Recart, F; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Cabarrocas, Roca I P; Alcubilla Gonzalez, Ramon
    Progress in photovoltaics
    Date of publication: 2008-03
    Journal article

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  • Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells

     Munoz, D; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon; Villar, F; Bertomeu Balaguero, Joan; Andreu, Jordi; Roca-I-Cabarrocas, P
    Thin solid films
    Date of publication: 2008-08
    Journal article

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  • Laser fired contacts on amorphous silicon deposited by hot-wire cvd on crystalline silicon

     Blanque, S; Voz Sanchez, Cristobal; Muñoz, D; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    23rd Europeran Photovoltaic Solar Energy Conference
    Presentation of work at congresses

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  • Premio a los mejores Pòsters del VIII Congreso TAEE

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Martin Garcia, Isidro; Orpella Garcia, Alberto; Vetter, Michael; Alcubilla Gonzalez, Ramon
    Award or recognition

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  • Tecnología electrónica de semiconductores orgánicos: fabricación de transistores en aulas docentes

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Vetter, Michael; Alcubilla Gonzalez, Ramon; Martin Garcia, Isidro; Orpella Garcia, Alberto
    Congreso de Tecnologías Aplicadas a la Enseñanza de la Electrónica
    Presentation's date: 2008-07-03
    Presentation of work at congresses

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  • Investigation of the formation of silicon nanocrystals by annealing of amorphous SiCx/c-Si structures

     Torres, I; Vetter, M; Ferre-Borrull, J; Marsal, L F; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    Physica E. Low-dimensional systems and nanostructures
    Date of publication: 2007-04
    Journal article

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  • Fullerene thin-film transistors fabricated on polymeric gate dielectric

     Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Cheylan, Stephanie; Orpella Garcia, Alberto; Vetter, M; Alcubilla Gonzalez, Ramon
    Thin solid films
    Date of publication: 2007-07
    Journal article

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  • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD

     Muñoz, D; Voz Sanchez, Cristobal; Fonrodona, M; Garin Escriva, Moises; Orpella Garcia, Alberto; Vetter, Michael; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Villar, F; Bertoeu, J; Andreu, Jordi
    Journal of non-crystalline solids
    Date of publication: 2006-07
    Journal article

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  • Electronic properties of intrinsic and doped amorphous silicon carbide films

     Vetter, Michael; Voz Sanchez, Cristobal; Ferre Tomas, Rafel; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Andreu, Jordi; Alcubilla Gonzalez, Ramon
    Thin solid films
    Date of publication: 2006-07
    Journal article

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  • Tecnología electrónica de semiconductores orgánicos: Fabricación de dispositivos en aulas docentes

     Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Orpella Garcia, Alberto; Vetter, Michael; Alcubilla Gonzalez, Ramon
    Congreso de Tecnologías Aplicadas a la Enseñanza de la Electrónica
    Presentation's date: 2006-07-13
    Presentation of work at congresses

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  • Progress in a: Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200ºC

     Muñoz, D; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Villar, F; Bertomeu Balaguero, Joan; Andreu, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P
    4th International Conference on Hot-Wire CVD (Cat-CVD) Process
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  • Optoelectronic devices based on evaporated pentacene films

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Martin Garcia, Isidro; Muñoz, D; Orpella Garcia, Alberto; Vetter, Michael; Alcubilla Gonzalez, Ramon
    Solar energy materials and solar cells
    Date of publication: 2005-01
    Journal article

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  • Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide

     Orpella Garcia, Alberto; Vetter, Michael; Ferre Tomas, Rafel; Martin Garcia, Isidro; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon
    Solar energy materials and solar cells
    Date of publication: 2005-01
    Journal article

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  • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition

     Martin Garcia, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella Garcia, Alberto; Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon
    Journal of applied physics
    Date of publication: 2005-12
    Journal article

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  • Pentacene organic thin film transistors fabricated in a non-lithographic process

     Voz Sanchez, Cristobal; Puigdollers Gonzalez, Joaquin; Orpella Garcia, Alberto; Martin Garcia, Isidro; Vetter, Michael; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation of work at congresses

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  • Electrical characterization of a-Si (n+)/c-Si(p) hetrojunction solar cells with back surface passivation based on a-SiCx:H films

     Martin Garcia, Isidro; Vetter, Michael; Orpella Garcia, Alberto; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Alcubilla Gonzalez, Ramon; Damon, J; Roca, P
    20th European Photovoltaic Solar Energy Conference and Exhibition
    Presentation of work at congresses

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  • Bifacial heterojunction Silicon solar cells obtained by Hot Wire CVD at low temperature

     Muñoz, D; Voz Sanchez, Cristobal; Fonrodona, M; Martin Garcia, Isidro; Orpella Garcia, Alberto; Vetter, Michael; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Soler, D; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu, Jordi
    20th European Photovoltaic Solar Energy Conference and Exhibition
    Presentation of work at congresses

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  • Organic photovoltaic solar cells based on MEH-PPV/PCBM blend

     Fonrodona, M; Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Sporer, C; Laukhina, E; Orpella Garcia, Alberto; Martin Garcia, Isidro; Vetter, Michael; Rovira, C; Alcubilla Gonzalez, Ramon
    20th European Photovoltaic Solar Energy Conference and Exhibition
    Presentation of work at congresses

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  • Influence of RF power on c-Si surface passivation by amorphous a-SiCx:H layers deposited by PECVD

     Ferre Tomas, Rafel; Martin Garcia, Isidro; Vetter, Michael; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation of work at congresses

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  • TEC2005-02716/MIC Nuevas tecnologías de fabricación de células solares fotovoltaicas

     Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Orpella Garcia, Alberto; Martin Garcia, Isidro; Garin Escriva, Moises
    Participation in a competitive project

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  • Organic photovoltaic solar cells based on MEH-PPV

     Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Sporer, C; Laukhina, E; Martin Garcia, Isidro; Orpella Garcia, Alberto; Vetter, Michael; Rovira, C; Alcubilla Gonzalez, Ramon
    Spanish Conference on Electron Devices
    Presentation of work at congresses

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  • Heterojunction Silicon solar cells obtained by hot-wire CVD at low temperature

     Muñoz, D; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Orpella Garcia, Alberto; Vetter, Michael; Puigdollers Gonzalez, Joaquin; Alcubilla Gonzalez, Ramon; Fonrodona, M; Soler, D; Bertomeu Balaguero, Joan; Andreu, Jordi
    Spanish Conference on Electron Devices
    Presentation of work at congresses

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  • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric

     Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Vetter, Michael; Orpella Garcia, Alberto; Alcubilla Gonzalez, Ramon
    Synthetic metals
    Date of publication: 2004-11
    Journal article

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  • Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization

     Puigdollers Gonzalez, Joaquin; Voz Sanchez, Cristobal; Martin Garcia, Isidro; Orpella Garcia, Alberto; Vetter, Michael; Alcubilla Gonzalez, Ramon
    Journal of non-crystalline solids
    Date of publication: 2004-06
    Journal article

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