Graphic summary
  • Show / hide key
  • Information


Scientific and technological production
  •  

1 to 50 of 111 results
  • Defect-oriented non-intrusive RF test using on-chip temperature sensors

     Abdallah, L.; Stratigopoulos, H. G.; Mir, S.; Altet Sanahujes, Josep
    IEEE VLSI Test Symposium
    Presentation's date: 2013-04
    Presentation of work at congresses

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    We present a built-in, defect-oriented test approach for RF circuits that is based on thermal monitoring. A defect will change the power dissipation of the circuit under test from its expected range of values which, in turn, will induce a change in the expected temperature in the substrate near the circuit. Thus, an on-chip temperature sensor that monitors the temperature near the circuit can reveal the existence of the defect. This test approach has the key advantage of being non-intrusive and transparent to the design since the temperature sensor is not electrically connected to the circuit. We discuss the basics of thermal monitoring, the design of the temperature sensor, as well as the test scheme. The technique is demonstrated on fabricated chips where a temperature sensor is employed to monitor an RF low noise amplifier.

  • Temperature as observable magnitude in silicon integrated circuits to characterize high frequency analog circuits

     Mateo Peña, Diego Cesar; Altet Sanahujes, Josep; Gómez Salinas, Didac; Aragones Cervera, Xavier
    International Conference on Materials Engineering for Resources
    Presentation's date: 2013-11-21
    Presentation of work at congresses

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    This paper introduces a novel on-chip measurement technique for the determination of the central frequency and 3dB bandwidth of a 60GHz power amplifier (PA) by performing low frequency temperature measurements in silicon integrated circuits. The techniques is implemented by using a temperature sensor embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.

  • Spatially and frequency-resolved monitoring of intradie capacitive coupling by heterodyne excitation infrared lock-in thermography

     León, Javier; Perpiñà Gilabet, Xavier; Altet Sanahujes, Josep; Vallvehi, Miquel; Jordà, Xavier
    Applied physics letters
    Date of publication: 2013-02-05
    Journal article

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    This paper combines the infrared lock-in thermography (IR-LIT) and heterodyne excitation techniques to detect high-frequency capacitive currents due to intradie electrical coupling between microelectronic devices or more complex systems. Modulating the excitation with the heterodyne approach, we drive devices or complex systems with high frequency electrical signals in such a way that they behave as low frequency heat sources, modulating their temperature field at a frequency detectable by an IR-LIT system. This approach is analytically studied and extended to a bi-dimensional scenario, showing that the thermal information at low frequency depends on the electrical characteristics of the sample at high frequency.

  • Physically based analysis of electrical frequency response of passive microelectronic circuits by heterodyne lock-in thermal means

     León, Javier; Perpiñà Gilabet, Xavier; Altet Sanahujes, Josep; Vellvehi, Miquel; Jordà, Xavier
    Journal of physics D. Applied physics
    Date of publication: 2013-10-17
    Journal article

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    This paper combines the heterodyne modulation technique with lock-in detection approaches to characterize the electrical behaviour of electronic systems in the frequency domain by thermal means. A thermal test chip (TTC), featuring a heating resistor and an embedded thermal sensor, is used as a test vehicle to assess this approach. The frequency response of the heating resistor has been first characterized by electrical measurements, yielding to a suitable TTC equivalent circuit which qualitatively explains its behaviour. Then, in order to infer this behaviour by thermal means, the heating resistor temperature has been heterodynally detected by on-chip local sensing (embedded thermal sensor) and off-chip spatially resolved (infrared lock-in thermography) techniques. The results of this paper show that from low-frequency temperature measurements it is possible to obtain the electrical frequency response of the TTC and to detect and locate capacitive coupling that disturbs the high-frequency operation of the device. © 2013 IOP Publishing Ltd.

  • Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors

     Altet Sanahujes, Josep; Gómez Salinas, Didac; Perpinyà, Xavier; Mateo Peña, Diego Cesar; González, José Luis; Vellvehi, Miquel; Jordà, Xavier
    Sensors and actuators A. Physical
    Date of publication: 2013-04
    Journal article

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    This work aims at showing a new approach for determining the efficiency of linear class A RF power amplifiers by means of non-invasive, steady-state thermal monitoring. The theoretical basis of the technique is indicated and its suitability in a real case application scenario is presented. More in detail, silicon surface thermal monitoring is performed with built-in sensors and infrared measurements on an RF power amplifier. The first monitoring circuit consists of differential sensors, which can be used for contact-less on-line efficiency monitoring or to easy production testing. The obtained results are corroborated by means of Infrared measurements. Off-chip temperature sensors have applications in failure analysis or circuit debugging scenarios. As a result, we observe a good agreement between the efficiency predicted with the thermal measurements (less than 5% of error) when compared to values measured with standard electrical equipment.

    This work aims at showing a new approach for determining the efficiency of linear class A RF power amplifiers by means of non-invasive, steady-state thermal monitoring. The theoretical basis of the technique is indicated and its suitability in a real case application scenario is presented. More in detail, silicon surface thermal monitoring is performed with built-in sensors and infrared measurements on an RF power amplifier. The first monitoring circuit consists of differential sensors, which can be used for contact-less on-line efficiency monitoring or to easy production testing. The obtained results are corroborated by means of Infrared measurements. Off-chip temperature sensors have applications in failure analysis or circuit debugging scenarios. As a result, we observe a good agreement between the efficiency predicted with the thermal measurements (less than 5% of error) when compared to values measured with standard electrical equipment.

  • 4H-SiC Integrated Circuits for High Temperature and Harsh Environment Applications  Open access

     Alexandru, Mihaela
    Defense's date: 2013-09-10
    Department of Electronic Engineering, Universitat Politècnica de Catalunya
    Theses

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.

  • On line monitoring of RF power amplifiers with embedded temperature sensors

     Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Gómez Salinas, Dídac
    IEEE International On-Line Testing Symposium
    Presentation's date: 2012-06-29
    Presentation of work at congresses

     Share Reference managers Reference managers Open in new window

  • Electro-thermal characterization of a differential temperature sensor and the thermal coupling in a 65nm CMOS IC

     Altet Sanahujes, Josep; Gonzalez Jimenez, Jose Luis; Gómez Salinas, Dídac; Perpiñà Gilabet, Xavier; Grauby, Stéphane; Dufis, Cédric; Vellvehi, Miquel; Mateo Peña, Diego Cesar; Dilhaire, Stephan; Jordà, Xavier
    International Workshop on Thermal Investigations of ICs and Systems
    Presentation's date: 2012-09-25
    Presentation of work at congresses

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    This paper explains the design decisions and the different measurements we have done in order to characterize the thermal coupling and the ch aracteristics of temperature sensors embedded in a integrated circuit implemented in a CMOS 65nm technology. The circu it contains a 2GHz linear power amplifier, MOS transistors behaving as heat sources and two differential temperatu re sensors. Temperature measurements performed with the embedded sensor are corroborated with an Infra-Red camera and a laser interferometer used as thermometer.

  • WSH: circuit design techniques for process-variation-resilient baseband mixed-signal ICs

     Silva Martinez, Jose; Onabajo, Marvin; Altet Sanahujes, Josep
    International Microwave Symposium
    Presentation's date: 2012-06-02
    Presentation of work at congresses

     Share Reference managers Reference managers Open in new window

  • Design of a fully integrated CMOS self-testable RF power amplifier using a thermal sensor

     Deltimple, Nathalie; Gonzalez Jimenez, Jose Luis; Altet Sanahujes, Josep; Luque, Yohann; Kerhervé, Eric
    European Solid-State Circuits Conference
    Presentation's date: 2012-09-21
    Presentation of work at congresses

     Share Reference managers Reference managers Open in new window

  • DC temperature measurements for power gain monitoring in RF power amplifiers

     Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Gómez Salinas, Didac; Perpiñà Gilabet, Xavier; Jordà, Xavier
    IEEE International Test Conference
    Presentation's date: 2012-11-05
    Presentation of work at congresses

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.

    In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.

  • Testing RF circuits with true non-intrusive built-in sensors

     Abdallah, Louay; STRATIGOPOULOS, HARALAMPOS-G.; Mir, Salvador; Altet Sanahujes, Josep
    Design, Automation and Test in Europe
    Presentation's date: 2012-03-12
    Presentation of work at congresses

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    We present a set of sensors that enable a builtin test in RF circuits. The key characteristic of these sensors is that they are non-intrusive, that is, they are not electrically connected to the RF circuit, and, thereby, they do not degrade its performances. In particular, the presence of spot defects is detected by a temperature sensor, whereas the performances of the RF circuit in the presence of process variations are implicitly predicted by process sensors, namely dummy circuits and process control monitors. We discuss the principle of operation of these sensors, their design, as well as the test strategy that we have implemented. The idea is demonstrated on an RF low noise amplifier using post-layout simulations.

  • On the use of static temperature measurements as process variation observable

     Gómez Salinas, Didac; Altet Sanahujes, Josep; Mateo Peña, Diego Cesar
    Journal of electronic testing. Theory and applications
    Date of publication: 2012-10
    Journal article

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    In this paper we present the use of static temperature measurements as process variation observable. Contrary to previously published thermal testing methods, the proposed methodology does not need an excitation signal, thus reducing test cost and improving built-in capabilities of thermal monitoring. The feasibility of the technique and a complete test methodology is presented using a narrowband LNA as example. Finally, a complete electro-thermal co-simulation test bench between the LNA and a differential temperature sensor embedded in the same silicon die is presented in order to validate the results. Results prove that RF figures of merit can be extracted from DC temperature measurements done without loading or exciting the RF circuit under test.

  • Electro-thermal coupling analysis methodology for RF circuits

     Gómez Salinas, Didac; Dufis, Cédric; Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Gonzalez Jimenez, Jose Luis
    Microelectronics journal
    Date of publication: 2012-09
    Journal article

    View View Open in new window  Share Reference managers Reference managers Open in new window

  • Circuito sensor para la medida de temperatura en pequeña señal en circuitos integrados

     Reverter Cubarsí, Ferran; Altet Sanahujes, Josep
    Date of request: 2012-02-23
    Invention patent

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    Circuito sensor para la medida de temperatura en pequeña señal en circuitos integrados.

    La presente invención describe un circuito sensor para la medida de las variaciones de temperatura en pequeña señal a una frecuencia F provocadas por la potencia disipada por otro circuito, denominado circuito bajo medida, a la misma frecuencia F. El circuito sensor está compuesto por un transductor de temperatura acoplado térmicamente al circuito bajo medida a través del sustrato del mismo cristal semiconductor, un circuito de polarización y un filtro amplificador acoplado en alterna para eliminar los efectos de las variaciones lentas de temperatura. Por ejemplo, y sin que esta aplicación limite las reivindicaciones de la patente, la tensión de salida del circuito sensor, con una componente espectral a la frecuencia F amplificada, puede ser utilizada para determinar características eléctricas del circuito bajo medida sin necesidad de cargarlo eléctricamente.

  • Sensor de temperatura diferencial con inmunidad a interferencias térmicas

     Altet Sanahujes, Josep; Gómez Salinas, Dídac; Mateo Peña, Diego Cesar
    Date of request: 2012-11-22
    Invention patent

     Share Reference managers Reference managers Open in new window

  • Circuito electrònico con magnitud eléctrica de salida dependiente de la diferencia de tensión de dos nodos de entrada y de la diferencia de temperatura de dos de sus dispositivos

     Mateo Peña, Diego Cesar; Altet Sanahujes, Josep; Gómez Salinas, Dídac
    Date of request: 2012-02-23
    Invention patent

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    Circuito electrónico con magnitud eléctrica de salida dependiente de la diferencia de tensión de dos nodos de entrada y de la diferencia de temperatura de dos de sus dispositivos.

    La presente invención describe un circuito electrónico cuya magnitud eléctrica de salida depende de la diferencia de tensión de dos de los nodos de entrada del mismo así como de la diferencia de temperatura de dos de sus dispositivos internos. La figura 1 muestra el símbolo del circuito electrónico. Éste tiene como entradas eléctricas dos entradas en tensión (2) y (3) y dos entradas de alimentación (6) y (7), y como salida tiene un nodo (1). Además, tiene dos dispositivos internos (4) y (5) cuya diferencia de temperaturas influirá de forma directa en el valor de la magnitud eléctrica del nodo de salida. En el circuito de la presente invención la variación de la magnitud eléctrica de la salida (1) depende de la diferencia de tensión de los dos nodos de entrada (2) y (3) así como de la diferencia de temperaturas de los dispositivos internos (4) y (5).

  • Procedimiento para la medición de la eficiencia de amplificadores de potencia integrados lineales clase A utilizando mediciones de temperatura en continua

     Mateo Peña, Diego Cesar; Altet Sanahujes, Josep; Gómez Salinas, Dídac
    Date of request: 2012-02-15
    Invention patent

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    Procedimiento para la medición de la eficiencia de amplificadores de potencia integrados lineales clase A utilizando mediciones de temperatura en continua.

    La presente invención describe un procedimiento para la medición de la eficiencia de amplificadores de potencia integrados lineales clase A utilizando mediciones de temperatura en continua. La Fig. 1 muestra un circuito integrado (1) que contiene un amplificador lineal de potencia clase A (2). La figura también muestra el generador que suministra una tensión continua para alimentar al amplificador (3) y el generador de señal (4) que el amplificador amplifica y entrega a la carga (5). Mediciones de la componente continua de la temperatura en puntos seleccionados del circuito integrado, en este caso el punto (6), permiten la medición de la eficiencia del amplificador sin necesidad de utilizar equipos de medición de señales analógicas alta frecuencia.

  • Monitor strategies for variability reduction considering correlation between power and timing variability

     Mauricio Ferré, Juan; Moll Echeto, Francesc de Borja; Altet Sanahujes, Josep
    IEEE International System On Chip Conference
    Presentation's date: 2011-09-27
    Presentation of work at congresses

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    As CMOS technology scales, Process, Voltage and Temperature (PVT) variations have an increasing impact on, performance and power consumption of the electronic devices. Variability causes an undesirable dispersion of performance parameters and a consequent reduction in parametric yield. Monitor and control techniques based on BB and VS can be used to reduce variability. This paper aims to determine which type of sensor provides a better overall variability reduction by taking into account the correlation between different performance magnitudes: static power, dynamic power and delay.

  • Non-invasive Monitoring of CMOS Power Amplifiers Operating at RF and mmW Frequencies using an On-chip Thermal Sensor

     Gonzalez Jimenez, Jose Luis; Martineau, Baudouin; Mateo Peña, Diego Cesar; Altet Sanahujes, Josep
    IEEE Radio Frequency Integrated Circuits Symposium
    Presentation's date: 2011-06-06
    Presentation of work at congresses

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    In this paper a non-invasive, contact-less technique for the on-chip observation of PA operation is presented. It uses a differential temperature sensor that transduces the temperature increase due to the power dissipated by active transistors operating at high frequencies into a low frequency signal that is proportional to some relevant PA figures of merit, such as output power or PAE. The technique is demonstrated by using the same thermal sensor in two different PAs (a 2 GHz PA and a 60 GHz PA) implemented with a 65 nm CMOS process.

  • Nonlinearity characterization of temperature sensing systems for integrated circuit testing by intermodulation products monitoring

     Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Perpiñà Gilabet, Xavier; Grauby, Stéphane; Dilhaire, Stefan; Jordà, Xavier
    Review of scientific instruments
    Date of publication: 2011-09
    Journal article

    View View Open in new window  Share Reference managers Reference managers Open in new window

  • Electrothermal design procedure to observe RF circuit power and linearity characteristics with a homodyne differential temperature sensor

     Onabajo, M.; Altet Sanahujes, Josep; Aldrete Vidrio, Hector Eduardo; Mateo Peña, Diego Cesar; Silva Martinez, Jose
    IEEE transactions on circuits and systems I: regular papers
    Date of publication: 2011-03
    Journal article

    View View Open in new window  Share Reference managers Reference managers Open in new window

  • Hot spot analysis in integrated circuit substrates by laser mirage effect

     Perpiñà Gilabet, Xavier; Jordà, Xavier; Vellvehi, Miquel; Altet Sanahujes, Josep
    Applied physics letters
    Date of publication: 2011
    Journal article

    View View Open in new window  Share Reference managers Reference managers Open in new window

  • Survey of robustness enhancement techniques for wireless systems-on-a-chip and study of temperature as observable for process variations

     Onabajo, M.; Gómez Salinas, Dídac; Aldrete Vidrio, Hector Eduardo; Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Silva Martinez, Jose
    Journal of electronic testing. Theory and applications
    Date of publication: 2011-06
    Journal article

    Read the abstract Read the abstract View View Open in new window  Share Reference managers Reference managers Open in new window

    Built-in test and on-chip calibration features are becoming essential for reliable wireless connectivity of next generation devices suffering from increasing process variations in CMOS technologies. This paper contains an overview of contemporary self-test and performance enhancement strategies for single-chip transceivers. In general, a trend has emerged to combine several techniques involving process variability monitoring, digital calibration, and tuning of analog circuits. Special attention is directed towards the investigation of temperature as an observable for process variations, given that thermal coupling through the silicon substrate has recently been demonstrated as mechanism to monitor the performances of analog circuits. Both Monte Carlo simulations and experimental results are presented in this paper to show that circuit-level specifications exhibit correlations with silicon surface temperature changes. Since temperature changes can be measured with efficient on-chip differential temperature sensors, a conceptual outline is given for the use of temperature sensors as alternative process variation monitors.

  • Procedimiento para la estimación de caracteristicas eléctricas de un circuito analógico mediante la medición en continua de temperatura

     Gómez Salinas, Dídac; Mateo Peña, Diego Cesar; Altet Sanahujes, Josep
    Date of request: 2011-12-23
    Invention patent

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    Procedimiento para la estimación de características eléctricas de un circuito analógico mediante la medición en continua de temperatura.

    La presente invención describe un procedimiento para la estimación de características eléctricas de circuitos analógicos integrados en un cristal semiconductor mediante la medición en continua de la temperatura. La fig. 1 muestra un cristal semiconductor (1) que puede contener diferentes circuitos analógicos (2). Por ejemplo, y sin que la lista limite los ámbitos de aplicación del presente procedimiento, la figura muestra un amplificador. Este amplificador dispone de entradas de señal (4) y entradas de la tensión de alimentación (3). La polarización del circuito en continua aplicando una tensión a las entradas de alimentación (3), sin aplicar señal a las entradas (4), provoca que los dispositivos que forman el amplificador disipen potencia. Mediciones del incremento de temperatura provocada por esta disipación de potencia en puntos seleccionados del semiconductor (5) permiten obtener características del circuito analógico, tales como, y sin que la lista limite los ámbitos de aplicación del presente procedimiento, ganancia de amplificadores. La medida de la temperatura se realiza en continua y puede hacerse bien mediante sensores de temperatura integrados en el mismo cristal semiconductor, bien mediante sensores externos.

  • Access to the full text
    Location of hot spots in integrated circuits by monitoring the substrate thermal-phase lag with the mirage effect  Open access

     Perpiñà Gilabet, Xavier; Altet Sanahujes, Josep; Jordà, Xavier; Vellvehi, Miquel; Mestres Andreu, Narcís
    Optics letters
    Date of publication: 2010
    Journal article

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    This Letter presents a solution for locating hot spots in active integrated circuits (IC) and devices. This method is based on sensing the phase lag between the power periodically dissipated by a device integrated in an IC (hot spot) and its corresponding thermal gradient into the chip substrate by monitoring the heat-induced refractive index gradient with a laser beam. The experimental results show a high accuracy and prove the suitability of this technique to locate and characterize devices behaving as hot spots in current IC technologies.

  • Access to the full text
    Electro-thermal coupling analysis methodology for RF circuits  Open access

     Gómez Salinas, Didac; Mateo Peña, Diego Cesar; Altet Sanahujes, Josep
    International Workshop on Thermal Investigations of ICs and Systems
    Presentation of work at congresses

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    In this paper we present an electro-thermal coupling simulation technique for RF circuits. The proposed methodology takes advantage of well established tools for frequency translating circuits in order to significantly reduce the computational resources needed when frequencies of interest are separated by orders of magnitude.

  • Access to the full text
    On evaluating temperature as observable for CMOS technology variability  Open access

     Altet Sanahujes, Josep; Gómez Salinas, Dídac; Dufis, Cédric Yvan; Gonzalez Jimenez, Jose Luis; Mateo Peña, Diego Cesar; Aragones Cervera, Xavier; Moll Echeto, Francesc de Borja; Rubio Sola, Jose Antonio
    European workshop on CMOS Variability
    Presentation's date: 2010-05-26
    Presentation of work at congresses

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is analyzed how Process, Voltage and Temperature (PVT) variations affect simultaneously some figures of merit (FoM) of some digital and analog circuits and the power dissipated by such circuits. It is shown that in some cases, a strong correlation exists between the variation of the circuit FoM and the variation of the dissipated power. Since local temperature increase at the silicon surface close to the circuit linearly depends on dissipated power, the results show that temperature can be considered as an observable magnitude for CMOS technology variability monitoring.

  • Access to the full text
    Hot spot detection in integrated circuits laterally accessing to their substrate using a laser beam  Open access

     Perpiñà Gilabet, Xavier; Altet Sanahujes, Josep; Jordà, Xavier; Vellvehi, Miquel
    International Workshop on Thermal Investigations of ICs and Systems
    Presentation of work at congresses

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    In this paper we present an electro-thermal coupling simulation technique for RF circuits. The proposed methodology takes advantage of well established tools for frequency translating circuits in order to significantly reduce the computational resources needed when frequencies of interest are separated by orders of magnitude.

  • Access to the full text
    High-power test device for package thermal assessment and validation of thermal measuremetn tecniques  Open access

     Jordà, Xavier; Perpiñà Gilabet, Xavier; Vellvehi, Miquel; Madrid, Francesc; Altet Sanahujes, Josep
    International Workshop on Thermal Investigations of ICs and Systems
    Presentation of work at congresses

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    This paper describes the structure and thermal behavior of a high-power thermal test chip (up to 200 W/cm2) designed for power electronics package assessment, which has also been used for the validation of thermal measurement techniques. In particular, we show two application examples where the proposed device allowed the assessment of different power substrate technologies, and the validation of temperature measurement techniques used to characterize the high frequency behavior of circuits and devices in the frequency domain using the heterodyne technique.

  • STRATEGIES FOR BUILT-IN CHARACTERIZATION TESTING AND PERFORMANCE MONITORING OF ANALOG RF CIRCUITS WITH TEMPERATURE MEASUREMENTS

     Aldrete Vidrio, Hector Eduardo
    Defense's date: 2010-09-27
    Department of Electronic Engineering, Universitat Politècnica de Catalunya
    Theses

     Share Reference managers Reference managers Open in new window

  • Congresos Temperatura en Circuitos Integrados y Amplificadores de Potencia

     Rubio Sola, Jose Antonio; Gonzalez Jimenez, Jose Luis; Mateo Peña, Diego Cesar; Aragones Cervera, Xavier; Altet Sanahujes, Josep
    Participation in a competitive project

     Share

  • POWER AMPLIFIERS AND ANTENNAS FOR MOBILE APPLICATIONS.APLICACIÓN AL HOME NETWORKING, Projecte Europeu CATRENE

     Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Dufis, Cédric Yvan; Gonzalez Jimenez, Jose Luis
    Participation in a competitive project

     Share

  • Access to the full text
    Strategies for built-in characterization testing and performance monitoring of analog RF circuits with temperature measurements  Open access

     Aldrete Vidrio, Hector Eduardo; Mateo Peña, Diego Cesar; Altet Sanahujes, Josep; Amine Salhi, M.; Grauby, Stéphane; Dilhaire, Stefan; Onabajo, M.; Silva Martinez, Jose
    Measurement science and technology
    Date of publication: 2010-06-08
    Journal article

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    This paper presents two approaches to characterize RF circuits with built-in differential temperature measurements, namely the homodyne and heterodyne methods. Both non-invasive methods are analyzed theoretically and discussed with regard to the respective trade-offs associated with practical off-chip methodologies as well as on-chip measurement scenarios. Strategies are defined to extract the center frequency and 1 dB compression point of a narrow-band LNA operating around 1 GHz. The proposed techniques are experimentally demonstrated using a compact and efficient on-chip temperature sensor for built-in test purposes that has a power consumption of 15 μW and a layout area of 0.005 mm2 in a 0.25 μm CMOS technology. Validating results from off-chip interferometer-based temperature measurements and conventional electrical characterization results are compared with the on-chip measurements, showing the capability of the techniques to estimate the center frequency and 1 dB compression point of the LNA with errors of approximately 6% and 0.5 dB, respectively.

  • Laser beam deflection-based perimeter scanning of integrated circuitsfor local overheating location (Pàgina inicial 012002)

     Perpiñà Gilabet, Xavier; Jordà, X; Altet Sanahujes, Josep; Vellvehi, M; Mestres Andreu, Narcís
    Journal of physics D. Applied physics
    Date of publication: 2009-01
    Journal article

     Share Reference managers Reference managers Open in new window

  • Heterodyne lock-in thermal coupling measurements in integrated circuits: Applications to test and characterization

     Altet Sanahujes, Josep; Aldrete Vidrio, Hector Eduardo; Aldrete-Vidrio, E; Mateo Peña, Diego Cesar; Salhi, A; Grauby, S; Claeys, W
    Review of scientific instruments
    Date of publication: 2009-02
    Journal article

     Share Reference managers Reference managers Open in new window

  • Modeling and design of reliable, process-variation aware nanoelectronic devices,circuits and systems

     Aragones Cervera, Xavier; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio; Perez Puigdemont, Jordi; Mauricio Ferré, Juan; Gómez Salinas, Dídac; Pons Solé, Marc; García Leyva, Lancelot; Gonzalez Jimenez, Jose Luis; Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Moll Echeto, Francesc de Borja
    Participation in a competitive project

     Share

  • POWER AMPLIFIERS AND ANTENNAS FOR MOBILE APPLICATIONS.APLICACIÓN AL HOME NETWORKING, Projecte Europeu CATRENE

     Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Dufis, Cédric Yvan; Gonzalez Jimenez, Jose Luis
    Participation in a competitive project

     Share

  • GRUP DE RECERCA DE CIRCUITS I SISTEMES INTEGRATS D'ALTES PRESTACIONS (HIPICS)

     Rubio Sola, Jose Antonio; Mateo Peña, Diego Cesar; Moll Echeto, Francesc de Borja; Gonzalez Jimenez, Jose Luis; Altet Sanahujes, Josep; Calomarde Palomino, Antonio; Molina Garcia, Marc Manel; Barajas Ojeda, Enrique; Gómez Salinas, Dídac; García Leyva, Lancelot; Andrade Miceli, Dennis Michael; Pons Solé, Marc; Trulls Fortuny, Xavier; Dufis, Cédric Yvan; Landauer, Gerhard Martin; Garcia Almudever, Carmen; Perez Puigdemont, Jordi; Aymerich Capdevila, Nivard; Gomez Fernandez, Sergio; Aragones Cervera, Xavier
    Participation in a competitive project

     Share

  • Modeling and design of reliable, process-variation aware nanoelectronic devices,circuits and systems

     Altet Sanahujes, Josep; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio; Mateo Peña, Diego Cesar; Aragones Cervera, Xavier; Perez Puigdemont, Jordi; Mauricio Ferré, Juan; Gómez Salinas, Dídac; Pons Solé, Marc; García Leyva, Lancelot; Gonzalez Jimenez, Jose Luis; Moll Echeto, Francesc de Borja
    Participation in a competitive project

     Share

  • Access to the full text
    Non-invasive RF built-in testing using on-chip temperature sensors  Open access

     Aldrete Vidrio, Hector Eduardo; Onabajo, M.; Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Silva-Martínez, José
    IEEE International Test Conference
    Presentation's date: 2009-11
    Presentation of work at congresses

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    This poster shows how to efficiently observe high-frequency figures of merit in RF circuits by measuring DC temperature with CMOS-compatible built-in sensors.

  • Hot-Spot Detection in Integrated Circuits by Substate Heat-Flux Sensing

     Perpiñà Gilabet, Xavier; Altet Sanahujes, Josep; Jordà, X; Vellvehi, M; Mestres, J Millán I N
    IEEE electron device letters
    Date of publication: 2008-10
    Journal article

     Share Reference managers Reference managers Open in new window

  • Steady-state sinusoidal thermal characterization at chip level by internal infrared-laser deflection. (Pàgina inicial 155508)

     Perpiñà Gilabet, Xavier; Jordà, X; Vellvehi, M; Altet Sanahujes, Josep; Mestres Andreu, Narcís
    Journal of physics D. Applied physics
    Date of publication: 2008-08
    Journal article

     Share Reference managers Reference managers Open in new window

  • A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits

     Altet Sanahujes, Josep; Aldrete-Vidrio, E; Aldrete Vidrio, Hector Eduardo; Mateo Peña, Diego Cesar; Perpiñà Gilabet, Xavier; Jordà, X; Vellvehi, M; Millán, J; Salhi, A; Grauby, S; Claeys, W; Dilhaire, S
    Measurement science and technology
    Date of publication: 2008-09
    Journal article

     Share Reference managers Reference managers Open in new window

  • Using temperature as observable of the frequency response of RF CMOS amplifiers

     Aldrete Vidrio, Hector Eduardo; Slhi, M A; Altet Sanahujes, Josep; Gruby, S; Mateo Peña, Diego Cesar; Michel, H; Clerjaud, L; Rampnous, J M; Rubio Sola, Jose Antonio; Dilhaire, W Claeys I S; Aldrete-Vidrio, E
    13th European Test Symposium
    Presentation of work at congresses

     Share Reference managers Reference managers Open in new window

  • Frequency characterization of a RF CMOS LNA by temperature measurements

     Aldrete Vidrio, Hector Eduardo; Aldrete-Vidrio, Eduardo; Altet Sanahujes, Josep; Mateo Peña, Diego Cesar
    AMSC - 2008 Analog and Mixed Signal Workshop
    Presentation of work at congresses

     Share Reference managers Reference managers Open in new window

  • PROCEDIMIENTO HETERODINO PARA LA REALIZACIÓN DE MEDICIONES DE TEMPERATURA

     Altet Sanahujes, Josep; Mateo Peña, Diego Cesar; Aldrete Vidrio, Hector Eduardo
    Date of request: 2008-04-18
    Invention patent

    Read the abstract Read the abstract Access to the full text Access to the full text Open in new window  Share Reference managers Reference managers Open in new window

    Procedimiento heterodino para la realización de mediciones de temperatura.

    Procedimiento para la observación de la amplitud y fase de componentes espectrales del aumento de temperatura en regiones (3) de un circuito integrado (5) provocado por el funcionamiento de un circuito o dispositivo (2) ubicado en el cristal semiconductor (1). Dicho circuito o dispositivo (2) se activa con una señal eléctrica (4) que contiene la suma de dos funciones sinusoidales de frecuencias f1 y f2. La frecuencia de la componente espectral de la temperatura medida es F=f2-f1.

  • Electrical characterization of analogue and RF integrated circuits by thermal measurements

     Mateo Peña, Diego Cesar; Altet Sanahujes, Josep; Aldrete-Vidrio, E; Aldrete Vidrio, Hector Eduardo
    Microelectronics journal
    Date of publication: 2007-02
    Journal article

     Share Reference managers Reference managers Open in new window

  • Differential Temperature Sensors Fully Compatible With a 0.35-um CMOS Process

     Aldrete-Vidrio, E; Aldrete Vidrio, Hector Eduardo; Mateo Peña, Diego Cesar; Altet Sanahujes, Josep
    IEEE transactions on components and packaging technologies
    Date of publication: 2007-12
    Journal article

     Share Reference managers Reference managers Open in new window

  • Dynamic surface temperature measurements in IC's

     Altet Sanahujes, Josep; Claeys, W; Dilhaire, S; Rubio Sola, Jose Antonio
    Proceedings of the IEEE
    Date of publication: 2006-08
    Journal article

     Share Reference managers Reference managers Open in new window