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Microscale characterization of surface recombination at the vicinity of laser-processed regions in c-Si solar cells

Autor
Roige, A.; Osso, J.; Martin, I.; Voz, C.; Ortega, P.; Lopez-Gonzalez, Juan M.; Alcubilla, R.; Vega, L.
Tipus d'activitat
Article en revista
Revista
IEEE journal of photovoltaics
Data de publicació
2016-03-01
Volum
6
Número
2
Pàgina inicial
426
Pàgina final
431
DOI
https://doi.org/10.1109/JPHOTOV.2016.2514710 Obrir en finestra nova
Projecte finançador
Células solares de silicio cristalino con contactos posteriores basadas en el procesado láser de capas dieléctricas
Células solares de silicio de alta eficiencia y bajo coste fabricadas a baja temperatura
Repositori
http://hdl.handle.net/2117/90876 Obrir en finestra nova
URL
http://ieeexplore.ieee.org.recursos.biblioteca.upc.edu/document/7389963/ Obrir en finestra nova
Resum
Laser firing processes have emerged as a technologically feasible approach for the fabrication of local point contacts or local doped regions in advanced high-efficiency crystalline-Si (c-Si) solar cells. In this work, we analyze the local impact induced by the laser pulse on the passivation layers, which are commonly present in advanced c-Si solar cell architectures to reduce surface recombination. We use microphotoluminescence (PL) measurements with a spatial resolution of 7 mu m to evaluate t...
Citació
Roige, A., Osso, J., Martin, I., Voz, C., Ortega, P., Lopez-Gonzalez, Juan M., Alcubilla, R., Vega, L. Microscale characterization of surface recombination at the vicinity of laser-processed regions in c-Si solar cells. "IEEE Journal of Photovoltaics", 1 Març 2016, vol. 6, núm. 2, p. 426-431.
Paraules clau
Crystalline silicon, Fired contacts, Laser processing, Microphotoluminescence spectroscopy, Photoluminescence, Surface passivation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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