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Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells

Autor
Gerling Sarabia, L.; Mahato, S.; Morales-Vilches, A.; Masmitja, G.; Ortega, P.; Voz, C.; Alcubilla, R.; Puigdollers, J.
Tipus d'activitat
Article en revista
Revista
Solar energy materials and solar cells
Data de publicació
2016-02-02
Volum
145
Número
2
Pàgina inicial
109
Pàgina final
115
DOI
https://doi.org/10.1016/j.solmat.2015.08.028 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/90412 Obrir en finestra nova
URL
http://www.sciencedirect.com.recursos.biblioteca.upc.edu/science/article/pii/S0927024815004225 Obrir en finestra nova
Resum
This work reports on a comparative study comprising three transition metal oxides, MoO3, WO3 and V2O5, acting as front p-type contacts for n-type crystalline silicon heterojunction solar cells. Owing to their high work functions (>5 eV) and wide energy band gaps, these oxides act as transparent hole-selective contacts with semiconductive properties that are determined by oxygen-vacancy defects (MoO3-x), as confirmed by X-ray photoelectron spectroscopy. In the fabricated hybrid structures, 15 nm ...
Citació
Gerling Sarabia, L., Mahato, S., Morales-Vilches, A., Masmitja, G., Ortega, P., Voz, C., Alcubilla, R., Puigdollers, J. Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells. "Solar energy materials and solar cells", 2 Febrer 2016, vol. 145, núm. 2, p. 109-115.
Paraules clau
Carrier selective contact, Silicon heterojunction, Transition metal oxide
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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