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100 K uncooled GaAs mesfet amplifier as paramp replacement

Autor
de los Reyes, E.; Camargo, E.; Soares, R.
Tipus d'activitat
Article en revista
Revista
Electronics Letters
Data de publicació
1978-06
Volum
14
Número
12
Pàgina inicial
378
Pàgina final
379
DOI
https://doi.org/10.1049/el:19780255 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/88814 Obrir en finestra nova
URL
http://ieeexplore.ieee.org.recursos.biblioteca.upc.edu/stamp/stamp.jsp?tp=&arnumber=4242236 Obrir en finestra nova
Resum
The characterisation, design and realisation of a low noise GaAs m.e.s.f.e.t. amplifier to replace a narrow band parametric amplifier at 1.7 GHz is described. Special measurement and analytical techniques are necessary owing to the high reflection coefficients and conditional stability of the transistor, as well as the very low noise figures being measured. A single stage amplifier is realised with a noise figure of 1.25 dB and 13.5 dB associated gain at 1.7 GHz.
Citació
de los Reyes, E. 100 K uncooled GaAs mesfet amplifier as paramp replacement. "Electronics Letters", Juny 1978, vol. 14, núm. 12, p. 378-379.
Paraules clau
Field effect transistor circuits, Microwave parametric amplifiers, Solid-state microwave circuits

Participants

  • de los Reyes, Elías  (autor)
  • Camargo, E.  (autor)
  • Soares, R.  (autor)