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A novel active gate driver for silicon carbide MOSFET

Autor
Paredes, A.; Sala, V.; Ghorbani, H.; Romeral, L.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
42nd Annual Conference of the IEEE Industrial Electronics Society
Any de l'edició
2016
Data de presentació
2017-02-24
Llibre d'actes
Proceedings of the IECON2016: 42nd annual conference of the Industrial Electronics Society: Florence (Italy), October 24-27, 2016
Pàgina inicial
3172
Pàgina final
3177
DOI
https://doi.org/10.1109/IECON.2016.7793222 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/document/7793222/ Obrir en finestra nova
Resum
A novel active gate driver (AGD) for silicon carbide (SiC) MOSFET is studied in this paper. The gate driver (GD) increases the gate resistance value during the voltage plateau area of the gate-source voltage, in both turn-on and turn-off transitions. The proposed AGD is validated in both simulation and experimental environments and in hard-switching conditions. The simulation is evaluated in MATLAB/Simulink with 100 kHz of switching frequency and 600 V of dc-bus, whereas, the experimental part w...
Paraules clau
Switching Losses, Silicon Carbide, Active Gate Driver
Grup de recerca
MCIA - Centre MCIA Innovation Electronics
PERC-UPC - Centre de Recerca d'Electrònica de Potència UPC

Participants