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Performance of a new gate drive controller for improving IGBT switching trajectory

Autor
Ghorbani, H.; Sala, V.; Paredes, A.; Romeral, L.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
42th Annual Conference of the IEEE Industrial Electronics Society
Any de l'edició
2016
Data de presentació
2016-10-24
Llibre d'actes
Proceedings of the IECON2016: 42nd annual conference of the Industrial Electronics Society: Florence (Italy), October 24-27, 2016
Pàgina inicial
3547
Pàgina final
3551
DOI
https://doi.org/10.1109/IECON.2016.7793741 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/document/7793741/ Obrir en finestra nova
Resum
This paper presents a new active gate control (AGC) approach for improving the switching behavior of insulated gate bipolar transistors (IGBTs). The proposed controller is applied on the gate driver (GD) of IGBT, which is based on Posicast control method. The reduction of stress in transient conditions without harmful effect on the efficiency is the main objective of this research that is accomplished by a simple feed-forward controller. The effectiveness of the proposed gate drive controller ...
Paraules clau
Active Gate Drive, Posicast Control, Igbt
Grup de recerca
MCIA - Centre MCIA Innovation Electronics
PERC-UPC - Centre de Recerca d'Electrònica de Potència UPC

Participants