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Resistive random access memory variability and its mitigation schemes

Autor
Pouman, P.; Amat, E.; Hamdioui, S.; Rubio, A.
Tipus d'activitat
Article en revista
Revista
Journal of low power electronics
Data de publicació
2017-03-01
Volum
13
Número
1
Pàgina inicial
124
Pàgina final
134
DOI
https://doi.org/10.1166/jolpe.2017.1464 Obrir en finestra nova
Projecte finançador
TEC2013-45638-C3-2-R - APROXIMACION MULTINIVEL AL DISEÑO ORIENTADO A LA FIABILIDAD DE CIRCUITOS INTEGRADOS ANALOGICOS Y DIGITALES
URL
http://www.ingentaconnect.com/content/asp/jolpe/2017/00000013/00000001/art00014 Obrir en finestra nova
Resum
The need for design of new computing and storage paradigms has leaded to the emergence of new technologies and procedures. Among these technologies, emerging non-volatile memories such as RRAMs are getting intense attention due to their attractive characteristics such as scalability and CMOS friendly manufacturing. However, similar to any other new technology emergences, having reliability and high performance devices is a challenge, and innovative new techniques are required to make the product...
Paraules clau
Emerging non-volatile memory, Mitigation, Process variability, RAM, Reliability
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants