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Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

Autor
Almora, Osbel; Gerling Sarabia, L.; Voz, C.; Alcubilla, R.; Puigdollers, J.
Tipus d'activitat
Article en revista
Revista
Solar energy materials and solar cells
Data de publicació
2017-08-01
Volum
168
Pàgina inicial
221
Pàgina final
226
DOI
https://doi.org/10.1016/j.solmat.2017.04.042 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/104004 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0927024817302118 Obrir en finestra nova
Resum
Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as an alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger...
Citació
Almora, O, Gerling Sarabia, L., Voz, C., Alcubilla, R., Puigdollers, J. Garcia-Belmonte, G. Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells. "Solar energy materials and solar cells", 1 Agost 2017, vol. 168, p. 221-226.
Paraules clau
Impedance spectroscopy, Minority carrier lifetime, Passivation, Silicon solar cells, Transition metal oxides
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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