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Crossbar-based memristive logic-in-memory architecture

Autor
Papandroulikadis, G.; Vourkas, I.; Abustelema, A.; Sirakoulis, G.; Rubio, A.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on nanotechnology
Data de publicació
2017-04-01
Volum
16
Número
3
Pàgina inicial
491
Pàgina final
501
DOI
https://doi.org/10.1109/TNANO.2017.2691713 Obrir en finestra nova
Projecte finançador
Aproximación multinivel al diseño orientado a la fiabilidad de circuitos integrados analógicos y digitales
Repositori
http://hdl.handle.net/2117/104473 Obrir en finestra nova
URL
http://ieeexplore.ieee.org.recursos.biblioteca.upc.edu/document/7893787/ Obrir en finestra nova
Resum
The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years. However, the topological aspects of the underlying ReRAM architecture and its organization have received less attention, as the focus has mainly been on device-specific properties for functionally complete logic gates through conditional switching in ReRAM circuits. A careful investigation and optimization of ...
Citació
Papandroulikadis, G., Vourkas, I., Abustelema, A., Sirakoulis, G., Rubio, A. Crossbar-based memristive logic-in-memory architecture. "IEEE transactions on nanotechnology", 1 Abril 2017, vol. 16, núm. 3, p. 491-501.
Paraules clau
Computing, Crossbar, Digital logic, Memristor, QQ, Resistive RAM (ReRAM), Resistive switch
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants

  • Papandroulikadis, Georgios  (autor)
  • Vourkas, Ioannis  (autor)
  • Abustelema, Angel  (autor)
  • Sirakoulis, Georgios  (autor)
  • Rubio Sola, Jose Antonio  (autor)

Arxius