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Recombination processes in passivated boron-implanted black silicon emitters

Autor
von Gastrow, G.; Ortega, P.; Alcubilla, R.; Husein, S.; Nietzold, T.; Bertoni, M.; Savin, H.
Tipus d'activitat
Article en revista
Revista
Journal of applied physics
Data de publicació
2017-05-14
Volum
121
Número
18
Pàgina inicial
185706-1
Pàgina final
185706-7
DOI
https://doi.org/10.1063/1.4983297 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/104958 Obrir en finestra nova
URL
http://aip.scitation.org/doi/10.1063/1.4983297 Obrir en finestra nova
Resum
In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the s...
Citació
von Gastrow, G., Ortega, P., Alcubilla, R., Husein, S., Nietzold, T., Bertoni, M., Savin, H. Recombination processes in passivated boron-implanted black silicon emitters. "Journal of applied physics", 14 Maig 2017, vol. 121, núm. 18, p. 185706-1-185706-7.
Paraules clau
High-efficiency solar cells, Ion-implanted black silicon emitters, Passivated boron-implanted black silicon emitters, Recombination processes, Surface nanostructuring, bSi emmitters
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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