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MOSFET degradation dependence on input signal power in a RF power amplifier

Autor
Crespo, A.; Barajas, E.; Martin, J.; Mateo, D.; Aragones, X.; Rodríguez, R.; Nafría, M.
Tipus d'activitat
Article en revista
Revista
Microelectronic engineering
Data de publicació
2017-06-25
Volum
178
Pàgina inicial
289
Pàgina final
292
DOI
https://doi.org/10.1016/j.mee.2017.05.021 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/106157 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0167931717302186 Obrir en finestra nova
Resum
Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC MOSFETs and RF PA (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of the PMOS. Results suggest that transistors mobility reductio...
Citació
Crespo, A., Barajas, E., Martin, J., Mateo, D., Aragones, X., Rodríguez, R., Nafría, M. MOSFET degradation dependence on input signal power in a RF power amplifier. "Microelectronic engineering", 25 Juny 2017, vol. 178, p. 289-292.
Paraules clau
Aging, CMOS, MOSFET degradation, RF power amplifier, RF stress
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

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