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Characterization of CMOS-MEMS resonant pressure sensors

Autor
Banerji, S.; Fernández, D.; Madrenas, J.
Tipus d'activitat
Article en revista
Revista
IEEE sensors journal
Data de publicació
2017-08-15
Volum
17
Número
20
Pàgina inicial
6653
Pàgina final
6661
DOI
https://doi.org/10.1109/JSEN.2017.2747140 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/107770 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/document/8022865/ Obrir en finestra nova
Resum
IEEE Comprehensive characterization results of a CMOS-MEMS resonant pressure sensor are presented. We have extensively evaluated the key performance parameters of our device in terms of quality factor (Q) variations under variable conditions of temperature and pressure, characterized by Knudsen number (Kn). The fundamental frequency of the reported device is 104.3 kHz. Over the full-scale pressure range of 0.1 to 100 kPa and a temperature range of –10 °C to 85 °C, Q from 450...
Citació
Banerji, S., Fernández, D., Madrenas, J. Characterization of CMOS-MEMS resonant pressure sensors. "IEEE sensors journal", 30 Agost 2017, vol. 17, núm. 20, p. 6653-6661
Paraules clau
CMOS-MEMS resonator, Knudsen number, MEMS characterization, Nonlinearity, Pressure sensor, Quality factor, Statistical mismatch
Grup de recerca
ISSET - Integrated Smart Sensors and Health Technologies

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