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Closed-loop compensation of charge trapping induced by ionizing radiation in MOS capacitors

Autor
Dominguez, M.; Bheesayagari, C.; Gorreta, S.; Lopez, G.; Pons, J.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on industrial electronics
Data de publicació
2017-08-31
Volum
65
Número
3
Pàgina inicial
2518
Pàgina final
2524
DOI
https://doi.org/10.1109/TIE.2017.2748033 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/108041 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/document/8023818/ Obrir en finestra nova
Resum
The objective of this work is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of MOS capacitors. To this effect, two devices made with silicon oxide have been simultaneously irradiated with gamma radiation: one with constant voltage bias, and the other working under a dielectric charge control. The experiment shows substantial charge trapping in the uncontrolled device whereas, at the same time, the con...
Citació
Dominguez, M., Bheesayagari, C., Gorreta, S., Lopez -Chavez, G., Pons, J. Closed-loop compensation of charge trapping induced by ionizing radiation in MOS capacitors. "IEEE transactions on industrial electronics", 31 Agost 2017, vol. 65, num. 3, p. 2518-2524
Paraules clau
CDielectrics, Capacitance, Capacitance-voltage characteristics, Charge trapping control, Ionizing radiation, MIS capacitors, MOS capacitors, Modulation, Radiation effects, Sigma-delta modulation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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