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Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/ n -Si Schottky diode

Autor
Mahato, S.; Biswas, D.; Gerling Sarabia, L.; Voz, C.; Puigdollers, J.
Tipus d'activitat
Article en revista
Revista
AIP Advances
Data de publicació
2017-08-01
Volum
7
Número
8
Pàgina inicial
2
Pàgina final
13
DOI
https://doi.org/10.1063/1.4993553 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/108808 Obrir en finestra nova
URL
http://aip.scitation.org/doi/10.1063/1.4993553 Obrir en finestra nova
Resum
Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements ranging from 300 K to 150 K. Ideality factor (n) and barrier height (ø) for the Schottky device were obtained from I-V characteristics as 2.04 and 0.83 eV at 300 K and 6.95 and 0.39 eV at 150 K respectively. It was observed that in presence of inhomogeneity at metal-semiconductor interface, the ideality factor increases and barrie...
Citació
Mahato, S., Biswas, D., Gerling Sarabia, L., Voz, C., Puigdollers, J. Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/ n -Si Schottky diode. "AIP Advances", 1 Agost 2017, vol. 7, núm. 8, p. 2-13.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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